Sci检索期刊论文

[1]Song Jianjun, Zhang Heming, Hu Huiyong, Dai Xianying, and Xuan Rongxi, Determination of conduction band edge characteristics of strained Si/Si_1-xGe_x, Chinese Physics，2007 16(12): 3827-3831

[2]宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜，第一性原理研究应变Si/(111)Si_1-xGe_x能带结构，物理学报，2008 57(9): 5918-5922

[3]宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜，应变Si价带色散关系模型，物理学报，2008 57(11): 7228-7232

[4]Song JianJun，Zhang HeMing，Hu HuiYong，Fu Qiang，Calculation of band structure in (101)-biaxially strained Si，Science In China，2009 52(4): 546-550 

[5]宋建军，张鹤鸣，胡辉勇，宣荣喜，戴显英，应变Si_1-xGe_x能带结构研究，物理学报，2009 58(11): 7947-7951

[6]宋建军，张鹤鸣，宣荣喜，胡辉勇，戴显英，应变Si/(001)Si_1-xGe_x空穴有效质量各向异性，物理学报，2009 58(7)：4958-4961

[7]宋建军，张鹤鸣，胡辉勇，宣荣喜，戴显英，应变Si_1-xGe_x/(111)Si空穴有效质量模型，物理学报，2010 59(1): 579-582

[8]宋建军，张鹤鸣，胡辉勇，戴显英，宣荣喜，应变Si/(001)Si_1-xGe_x本征载流子浓度模型，物理学报，2010 59(3): 2064~2067

[9]Song JianJun，Zhang HeMing，Hu HuiYong，Dai XianYing, Xuan Rongxi, Valence band structure of strained Si/(111)Si_1-xGe_x, Science In China, 2010 53(3): 454~457

[10]宋建军，张鹤鸣，戴显英，宣荣喜，胡辉勇，不同晶系应变Si状态密度研究，物理学报，2011 60(4): 047106

[11]宋建军，张鹤鸣，胡辉勇，王晓艳，王冠宇，四方晶系应变Si空穴散射机制，物理学报，2012 61(5): 057304

[12]SONG JianJun, ZHANG HeMing, HU HuiYong, WANG XiaoYan & WANG GuanYu, Hole Mobility Enhancement of Si by Rhombohedral Strain, Science in China, Physics Mechanics and Astronomy, 2012 55(8):1399-1403

[13]SONG JianJun, YANG Chao, ZHANG HeMing, HU HuiYong, ZHOU CHunYu & WANG Bin, Longitudinal, Transverse, Density-of-States, and Conductivity Masses of Electron in (001), (101) and (111) Biaxially-Strained-Si and Strained-Si_1-xGe_x, Science in China, Physics Mechanics and Astronomy, 2012 55(11):2033-2037

[14]Song Jian-Jun, Yang Chao, Wang Guan-Yu, Zhou Chun-Yu, Wang Bin, Hu Hui-Yong, and Zhang He-Ming，Conduction Band Model of [110]/(001) Uniaxially Strained Si，Japanese Journal of Applied Physics, 2012 51(10):104301

[15]Song Jian-Jun, Yang Chao, Hu Hui-Yong, Dai Xian-Ying, Wang Cheng and Zhang He-Ming，Penetration Depth at Various Raman Excitation Wavelengths and Stress Model for Raman Spectrum in Biaxially-Strained Si, Science in China, Physics Mechanics and Astronomy, 2013 56(11): 1–6

[16]宋建军，杨超，朱贺，张鹤鸣，宣荣喜，胡辉勇，舒斌，SOI SiGe HBT结构设计及频率特性研究，物理学报

Ei检索期刊论文

[1]宋建军，张鹤鸣，舒斌，胡辉勇，戴显英，K.P dispersion relation near Δⁱ valley in Strained Si_1-xGe_x/Si，半导体学报，2008 29(3) 442-446

[2]Song Jianjun, Zhang Heming, Hu Huiyong, Dai XianYing, Xuan Rongxi, Chinese Journal of Semiconductors, Calculation of band edge levels of strained Si/(111)Si_1-xGe_x, 2010 31(1): 012001-3

[3]Song Jianjun,Zhang Heming, Dai Xianying, Hu Huiyong and Xuan Rongxi, Chinese Journal of Semiconductors, Band edge model of (101)-biaxial strained Si, 2008 29(9): 1670-1673

[4]Song Jianjun,zhu He,Zhang Heming, Dai Xianying, Hu Huiyong and Xuan Rongxi,Model of Averaged Hole Mobility of Biaxially Strained Si, Journal of semiconductor, 2013 34(8): 1-4

ISTP检索会议论文

[1]JianJun Song, HeMing Zhang, HuiYong Hu, XianYing Dai, RongXi Xuan, Study on Hole Effective Mass of Strained Si_1-xGe_x/(101)Si，IEEE International Conference on Electron Devices and Solid-State Circuits, 2009, Xi’an

[2]Jian-Jun Song, He-Ming Zhang, Hui-Yong Hu, Xian-Ying Dai, Rong-Xi Xuan, Intrinsic carrier concentration in strained Si_1-xGe_x/(101)Si, Materials Science Forum 2011 663-665: 470-472

[3]Jian-Jun Song, Heng-Sheng Shan, He-Ming Zhang, Hui-Yong Hu, Xian-Ying Dai, Rong-Xi Xuan, Model of DOS near the Top of Valence Band in Strained Si_1-xGe_x/(001)Si, Applied Mechanics and Materials, 2011 55-57: 979-982

[4]JianJun Song,Sun Liu, HeMing Zhang, Design and implementation of High-Speed Dual-Modulus, Applied Mechanics and Materials 2012 109: 271-275

[5]Jian-Jun Song, Hua-Ying Wu, He-Ming Zhang, Model of electron scattering of strained Si/Si_1-xGe_x(100), Applied Mechanics and Materials 2012 110-116 3338-3342

[6]ian-jun Song,Shuai Lei, He-ming Zhang, Anisotropic Hole Mobility in Strained Si_1-xGe_x/(001)Si, Solid State Phenomena 2012 181-182: 388-392

专利

[1]宋建军、王冠宇、张鹤鸣、胡辉勇、宣荣喜、周春宇。异质金属堆叠栅SSGOI pMOSFET器件结构（ZL2013021600354890，授权时间：2013年2月）

[2]宋建军、王冠宇、张鹤鸣、胡辉勇、宣荣喜。多晶Si_1-xGe_x/金属并列覆盖双栅SSGOI nMOSFET器件结构（ZL2012121300772960，授权时间：2013年1月）

[3]宋建军、王冠宇、张鹤鸣、胡辉勇、宣荣喜、周春宇。一种垂直交叉堆叠栅应变SiGeC量子阱沟道CMOS器件结构（ZL2013011500354830，授权时间：2013年2月）