2017年论文：

[1] Wang, Yucheng; Zhang, Yuming; Liu, Yintao; Pang, Tiqiang; Hu, Ziyang; Zhu, Yuejin; Luan, Suzhen; Jia, Renxu; Temperature-dependence studies of organolead halide perovskite-based metal/semiconductor/metal photodetectors RSC Advances 7 33 20206-20211 2017

[2] Wang, Yucheng; Zhang, Yuming; Pang, Tiqiang; Xu, Jie; Hu, Ziyang; Zhu, Yuejin; Tang, Xiaoyan; Luan, Suzhen; Jia, Renxu; Ionic behavior of organic–inorganic metal halide perovskite based metal-oxide-semiconductor capacitors Physical Chemistry Chemical Physics 2017  

[3] Dong, Linpeng; Jia, Renxu; Li, Chong; Xin, Bin; Zhang, Yuming; Ab initio study of N-doped β-Ga 2 O 3 with intrinsic defects: the structural, electronic and optical properties Journal of Alloys and Compounds 712 379-385 2017  

[4] Peng, B; Zhang, YM; Dong, LP; Wang, YT; Jia, RX; The effect of ions on the magnetic moment of vacancy for ion-implanted 4H-SiC Journal of Applied Physics 121 13 133904 2017  

[5] Liu, Yintao; Jia, Renxu; Wang, Yucheng; Hu, Ziyang; Zhang, Yuming; Pang, Tiqiang; Zhu, Yuejin; Luan, Suzhen; Inhibition of Zero Drift in Perovskite-Based Photodetector Devices via [6, 6]-Phenyl-C61-butyric Acid Methyl Ester Doping ACS Applied Materials & Interfaces 9 18 15638-15643 2017  

[6] Ma, Xiaofan; Zhang, Yuming; Dong, Linpeng; Jia, Renxu; First-principles calculations of electronic and optical properties of aluminum-doped β-Ga 2 O 3 with intrinsic defects Results in Physics 7 1582-1589 2017 Elsevier  

2016年论文：

[1] L. Dong, R. Jia*, B. Xin, B. Peng, Y. Zhang, Effects of oxygen vacancies on the structural and optical properties of beta-Ga2O3, Scientific reports, 7 (2017) 40160.

[2] B. Xin, Y.-M. Zhang, H.-M. Wu, Z.C. Feng, H.-H. Lin, R.-X. Jia*, Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 34 (2016) 031104.

[3] B. Xin, R.-X. Jia*, J.-C. Hu, Y.-M. Zhang, Super-V-shaped structure on 3C-SiC grown on the C-face of 4H-SiC, Journal of Physics D: Applied Physics, 49 (2016) 335305.

[4] Y. Wang, R. Jia,* Y. Zhao, C. Li, Y. Zhang, Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness, Journal of Electronic Materials, 45 (2016) 5600-5605.

[5] B. Peng, R.X. Jia*, Y.T. Wang, L.P. Dong, J.C. Hu, Y.M. Zhang, Concentration of point defects in 4H-SiC characterized by a magnetic measurement, Aip Adv, 6 (2016) 095201.

[6] J. Hu, R. Jia*, B. Xin, B. Peng, Y. Wang, Y. Zhang, Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial la[ant]yers, Materials, 9 (2016) 743.

[7] L. Dong, R. Jia*, B. Xin, Y. Zhang, Effects of post-annealing temperature and oxygen concentration during sputtering on the structural and optical properties of β-Ga2O3 films, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 34 (2016) 060602.

2015年之前的论文

[1] B. Xin, Y.-M. Zhang, H.-M. Wu, Z.C. Feng, H.-H. Lin, R.-X. Jia*, Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (3) (2016) 031104.

[2] M. Lei, Y. Sheng, L. Wan, K. Bi, K. Huang, R.X. Jia*, J. Liu, Y.G. Wang, A novel self-catalytic route to zinc stannate nanowires and cathodoluminescence and electrical transport properties of a single nanowire, J Alloy Compd 657  (2016) 394-399.

[3] B. Xin, R.X. Jia*, J.C. Hu, C.Y. Tsai, H.H. Lin, Y.M. Zhang, A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVD, Appl Surf Sci 357  (2015) 985-993.

[4] Y.C. Wang, R.X. Jia*, C.Z. Li, Y.M. Zhang, Electric properties of La2O3/SiO2/4H-SiC MOS capacitors with different annealing temperatures, Aip Adv 5 (8) (2015).

[5] Y.P. Liu, W.W. Zhong, Y.X. Du, Q.X. Yuan, X. Wang, R.X. Jia*, Novel radial vanadium pentoxide nanobelt clusters for Li-ion batteries, J Alloy Compd 633  (2015) 353-358.

[6] M. Lei, K. Bi, Y.B. Zhang, K. Huang, X.L. Fu, X. Wang, R.X. Jia*, H.J. Yang, D.Y. Fan, Y.G. Wang, Highly selective growth of TiO2 nanoparticles on one tip of CdS nanowires, J Alloy Compd 646  (2015) 1004-1008.

[7] R.X. Jia*, L.P. Dong, Y.X. Niu, C.Z. Li, Q.W. Song, X.Y. Tang, F. Yang, Y.M. Zhang, Energy-band alignment of atomic la[ant]yer deposited (HfO2)(x)(Al2O3)(1-x) gate dielectrics on 4H-SiC, Chinese Phys B 24 (3) (2015).

[8] H. Yan, R. Jia*, X. Tang, Q. Song, Y. Zhang, Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics, Journal of Semiconductors 35 (6) (2014) 066001.

[9] S. Lin, X.S. Zhao, Y.F. Li, K. Huang, R.X. Jia*, C. Liang, X. Xu, Y.F. Zhou, H. Wang, D.Y. Fan, H.J. Yang, R. Zhang, Y.G. Wang, M. Lei, RGO-supported beta-SiC nanoparticles by a facile solvothermal route and their enhanced adsorption and photocatalytic activity, Mater Lett 132  (2014) 380-383.

[10] R.X. Jia*, H.L. Yan, W.J. Liu, M. Lei, Periodic solitons in dispersion decreasing fibers with a cosine profile, Chinese Phys B 23 (10) (2014).

[11] R.X. Jia*, Y.C. Wang, W.J. Liu, M. Lei, Breathers and solitons in nonlinear optical materials, J Electromagnet Wave 28 (7) (2014) 873-879.

[12] R.X. Jia*, S.C. Liu, H.D. Xu, Z.T. Chen, X.Y. Tang, F. Yang, Y.X. Niu, Study on Grove model of the 4H-SiC homoepitaxial growth, Acta Phys Sin-Ch Ed 63 (3) (2014).

[13] R.X. Jia*, Y.C. Wang, W.J. Liu, M. Lei, Soliton interactions in dispersion-decreasing fibers with the exponential dispersion profile, J Mod Optic 60 (21) (2013) 1993-1997.

[14] R.X. Jia, Y.M. Zhang, Y.M. Zhang, Reduction of deep level defects in unintentionally doped 4H-SiC homo-epil[ant]ayers by ion implantation, J Wuhan Univ Technol 27 (3) (2012) 415-417.

[15] Y.H. Wang, Y.M. Zhang, Y.M. Zhang, Q.W. Song, R.X. Jia, Al/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights, Chinese Phys B 20 (8) (2011).

[16] Y. Gu, Y.M. Zhang, Y.M. Zhang, H.L. Lu, R.X. Jia, Analysis and Simulation of Inverter Employing SiC Schottky Diode, 2011 International Conference Of Electron Devices And Solid-State Circuits (Edssc)  (2011).

[17] Y.H. Wang, Y.M. Zhang, Y.M. Zhang, L. Zhang, R.X. Jia, D. Chen, SiC epitaxial la[ant]yers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes, Chinese Phys B 19 (3) (2010).

[18] R.X. Jia, Y.M. Zhang, Y.M. Zhang, H. Guo, Calculation of Dislocation Destiny Using X-Ray Diffraction for 4H-SiC Homoepitaxial la[ant]yers, Spectrosc Spect Anal 30 (7) (2010) 1995-1997.

[19] R.X. Jia, Y.M. Zhang, Y.M. Zhang, First-principle calculation on the defect energy level of carbon vacancy in 4H-SiC, Chinese Phys B 19 (10) (2010).

[20] D. Chen, Y.M. Zhang, Y.M. Zhang, Y.H. Wang, R.X. Jia, Characterization of the heteroepitaxial growth of 3C-SiC on Si during low pressure chemical vapor deposition, Chinese Sci Bull 55 (27-28) (2010) 3102-3106.

[21] Y.H. Wang, Y.M. Zhang, Y.M. Zhang, R.X. Jia, D. Chen, SiC epitaxial la[ant]yers grown by chemical vapor deposition, Extended Abstracts 2008 International Workshop on Junction Technology  (2008) 210-212.

[22] W. Jia, Y.M. Zhang, Y.M. Zhang, R.X. Jia, H. Guo, Simulation of SiC deposition in a hot wall CVD reactor, P Soc Photo-Opt Ins 6984  (2008).

[23] R.X. Jia, Y.M. Zhang, Y.M. Zhang, Y.H. Wang, Nitrogen doped 4H-SiC homoepitaxial la[ant]yers grown by CVD, Acta Phys Sin-Ch Ed 57 (10) (2008) 6649-6653.

[24] R.X. Jia, Y.M. Zhang, Y.M. Zhang, Y.E. Wang, Nitrogen incorporation characteristics of 4H-SiC epitaxial la[ant]yer - art. no. 69840V, P Soc Photo-Opt Ins 6984  (2008) V9840-V9840.

[25] R.X. Jia, Y.M. Zhang, Y.M. Zhang, H. Guo, S.Z. Loan, The relation between Green-band luminescence of 4H-SiC homoepitaxial la[ant]yer and defects, Acta Phys Sin-Ch Ed 57 (7) (2008) 4456-4458.