* Denotes Corresponding Author

After Joining Xidian Univ.：

Before Joining Xidian Univ.：

Journals:

(1) Hong Zhou, Kerry Maize, Jinhyun Noh, Ali Shakouri, and Peide D. Ye, “Thermo-dynamic Studies of β-Ga2O3 Nano-membrane Field-effect Transistors on Different Substrates”, ACS Omega, vol. 2, pp. 7723-7729, 2017.

(2) Hong Zhou, Xiabing Lou, Kartnn Sutherlin, Jarren Summers, Kelson D. Chabak, Roy G. Gordon and Peide D. Ye, “DC and RF performance of AlGaN/GaN MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric”, IEEE Electron Device Letters, vol. 38, pp. 1294-1297, 2017. 

(3) Hong Zhou, Xiabing Lou, Sang Bok Kim, Kelson D. Chabak, Roy G. Gordon and Peide D. Ye, “Enhancement-Mode AlGaN/GaN fin-MOSHEMTs on Si Substrate with Atomic Layer Epitaxy MgCaO”, IEEE Electron Device Letters, vol. 38, pp.1294-1297, 2017.

(4) Hong Zhou, Kerry Maize, Gang Qiu, Ali Shakouri, and Peide D. Ye, “β-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5 A/mm and Their Self-heating Effect”, Applied Physics Letters, vol. 111, pp. 092102-1-092102-4, 2017.

(5) Hong Zhou, Mengwei Si, Sami Alghamdi, Gang Qiu, Lingming Yang, and Peide D. Ye, “High Performance Depletion/Enhancement-Mode β-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm”, IEEE Electron Device Letters, vol. 38, pp. 103-105, 2017.

(6) Hong Zhou, Sami Alghamdi, Mengwei Si, Gang Qiu, and Peide D. Ye, “Al2O3/(-201) β-Ga2O3 Interface Improvement through Piranha Pretreatment and Post Deposition Annealing”, IEEE Electron Device Letters, vol. 37, pp. 1411-1414, Oct. 2016.

(7) Hong Zhou, Xiabing Lou, Nathan J. Conrad, Mengwei Si, Heng Wu, Sami Alghamdi, Shiping Guo, Roy G. Gordon, Peide D. Ye, “High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric”, IEEE Electron Device Letters, vol. 37, no. 5, pp. 556-559, May 2016.

(8) Hong Zhou, Yuchen Du, and Peide D. Ye, “Ionic liquid gating on atomic layer deposition passivated GaN: Ultra-high electron density induced high drain current and low contact resistance”, Applied Physics Letters, vol. 108, pp. 202102-1-202102-5, May 2016.

(9) Hong Zhou, Geok Ing Ng, Zhi Hong Liu, and Subranmaniam Arulkumaran, “Side-gate effects on the direct current and radio frequency characteristics of AlGaN/GaN high-electron-mobility transistor on silicon”, Applied Physics Letters, vol. 99, pp. 163505-1-163505-3, Oct. 2011.

(10) Hong Zhou, Geok Ing Ng, Zhi Hong Liu, and Subranmaniam Arulkumaran, “Improved Device Performance by Post-Oxide Annealing in ALD Al2O3/AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor on Si”, Applied Physics Express, vol. 4, pp. 104102-1-104102-3, Sep. 2011.

(11)  Hong Zhou, Mengwei Si, Jinhyun Noh, Kerry Maize, S. B. Kim, Roy Gordon, Ali Shakouri, Peide D. Ye, “Hystersis Free Negative Capacitance Hf0.5Zr0.5O2/Mg0.25Ca0.75O/AlGaN/GaN MOSHEMTs on Si Substrate with Dual-Sweep Subthreshold Swing < 60 mV/dec”, IEEE Electron Device Letters, 2017. (Submitted) 

(12) Sung-Jae Chang, Hong Zhou, Nanbo Gong, Dongmin Kang, Jongwon Lim, Mengwei Si, Peide D. Ye, T. P. Ma, “Fin-width Effects on Characteristics of InGaAs-Based Vertical Independent Double-Gate Transistor”, IEEE Electron Device Letters, vol. 38, pp. 441-444, 2017.

(13)  M. Si, C. J. Su, C. Jiang, N. J. Conrad, H. Zhou, K. D. Maize, G. Qiu, C. T. Wu, A. Shakouri, P. D. Ye, “Steep Slope MoS2 2D Transistors: Negative Capacitance and Negative Differential Resistance”, Nat. Nano. 2017, (Accepted).

(14)  Mengwei Si, Lingming Yang, Hong Zhou, Peide D. Ye, “β-Ga2O3 Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications”, ACS Omega, vol. 2, pp. 7136-7140, 2017.

(15)  Jing-Kai Qin, Gang Qiu, Jie Jian, Hong Zhou, Ling-Ming Yang, Cheng-Yan Xu, Hai-Yan Wang, and Peide D. Ye, “Controlled Growth of Large-Size 2D Selenene and Its Electronic and Optoelectronic Applications”, ACS Nano, vol. 11, pp. 10222-10229, 2017.

(16)  Maruf A. Bhuiyan, Hong Zhou, S. J. Chang, Xiabing Lou, Xian Gong, Rong Jiang, Huiqi Gong, En Xia Zhang, C. H. Won, J. W. Lim, J. H. Lee, Roy G. Gordon, Robert A. Reed, D. M. Fleetwood, Peide Ye, and T. P. Ma, “Total Ionizing Dose Responses of GaN-based HEMTs with Different Channel Thicknesses and MOSHEMTs with Epitaxial MgCaO as Gate Dielectric”, IEEE Trans. Nuclear Sci., 2017. (Accepted)

(17)  Xiabing Lou, Hong Zhou, Sang Bok Kim, Sami Alghamdi, Xian Gong, Jun Feng, Peide D. Ye, Roy G. Gordon, “Epitaxial Growth of MgCaO on GaN by Atomic Layer Deposition”, Nano Letters, vol. 16, pp. 7650-7654, 2016. 

(18)  Gang Qiu, Yuchen Du, Adam Charnas, Hong Zhou, Shengyu Jin, Zhe Luo, Dmitry Zemlyanov, Xianfan Xu, Gary Cheng, Peide D. Ye, “Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5”, Nano Letters, vol. 16, pp. 7364-7369, 2016.

(19)  Yuchen Du, Adam T. Neal, Hong Zhou and Peide D. Ye, “Weak Localization in Few-Layer Black Phosphorus”, 2D Materials, vol. 3, pp. 024003, Mar. 2016.

(20)  Yuchen Du, Lingming Yang, Hong Zhou and Peide D. Ye, “Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping”, IEEE Electron Device Letters, vol. 37, pp. 429-432, Mar. 2016.

(21)  Yuchen Du, Adam T. Neal, Hong Zhou and Peide D. Ye, “Transport studies in 2D transition metal dichalcogenides and black phosphorus”, J. of Physics: Condensed Matter, vol. 28, pp. 263002, May 2016.

(22)  Zhihong Liu, Geok Ing Ng, Hong Zhou, Subranmaniam Arulkumaran, “Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation”, Applied Physics Letters, vol. 98, pp. 113506-1-113506-3, Oct. 2011.

(23)  Zhihong Liu, Geok Ing Ng, Subranmaniam Arulkumaran, Yrikleterra Manung, Hong Zhou, “Temperature-dependent forward gate current transport in ALD Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor”, Applied Physics Letters, vol. 98, pp. 163105-1-163105-3, April 2011.  

Conferences:

(1) Hong Zhou, Daewoong Kwon, Angada B. Sachid, Yuhung Liao, Korok Chatterjee, Ava J. Tan, Ajay K. Yadav, Chenming Hu, and Sayeef Salahuddin, "Negative Capacitance, n-Channel, Si FinFETs: Bi-directional Sub-60 mV/dec, Negative DIBL, Negative Differential Resistance and Improved Short Channel Effect", VLSI, June, 2018. (Accepted)

(2) Hong Zhou, Kerry Maize, Jinhyun Noh, Ali Shakouri, Peide D. Ye, “High Performance Nano-membrane β-Ga2O3 Field-effect Transistors on Sapphire Substrate with Reduced Self-heating Effect”, 223rd ECS meeting, May 2018. Invited Talk.  

(3) Hong Zhou, Peide Ye, “Depletion/Enhancement-mode β-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5/1 A/mm and the mechanism of forming Enhancement mode devices”, 48th IEEE Semiconductor Interface Specialists, Conference (SISC), 2017, Oral Presentation.   

(4) Hong Zhou Kerry Maize, Jinhyun Noh, and Peide D. Ye, “Minimized Self-heating Effect of β-Ga2O3 Nano-membrane Field-effect Transistors on Sapphire Substrate”, 2nd International Workshop on Gallium Oxide (IWGO), 2017, Oral Presentation.

(5) Hong Zhou and Peide D. Ye, “Depletion/Enhancement-mode β-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5/1 A/mm”, 75th Device Research Conference (DRC), 2017.  

(6) Hong Zhou, Mengwei Si, Sami Alghamdi, Gang Qiu, Lingming Yang, and Peide D. Ye, “High performance depletion/enhancement-mode β-Ga2O3 on insulator (GOOI) field-effect-transistor (FET) with record drain current of 600/450 mA/mm”, 47th IEEE Semiconductor Interface Specialists, Conference (SISC), 2016, (Late news) Oral Presentation.  

(7) Hong Zhou Xiabing Lou, Kartnn Sutherlin, Jarren Summers, Sang Bok Kim, Kelson D. Chabak, Roy G. Gordon and Peide D. Ye, “DC and RF characterizations of AlGaN/GaN MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric”, 74th Device Research Conference (DRC), 2016, 1-2, Oral Presentation.  

(8) Hong Zhou,, Xiabing Lou, Kartnn Sutherlin, Kelson D. Chabak, Roy G. Gordon and Peide D. Ye, “AlGaN/GaN MOSHEMT with POUT=4.18 W/mm at f=35 GHz Enabled by Atomic Layer Epitaxy MgCaO Dielectric”, International Workshop on Nitride Semiconductors (IWN), 2016, Oral Presentation.  

(9) H. Zhou, S. Alghmadi, M. Si, and P. D. Ye, “Determination of Al2O3/β-Ga2O3 Interface Trap Densities Dit Through Photo-Assisted C-V Method”, 2016 Lester Eastman Conference (LEC) on High Performance Devices, 2016. 

(10) Hong Zhou Xiabing Lou, Heng Wu, Sami Alghamdi, Shiping Guo, Roy G. Gordon, Peide D. Ye, “InAlN/GaN MOSHEMTs with high drain current of 2.3 A/mm high on/off ratio of 1012 and low SS of 64 mV/dec enabled by atomic-layer-epitaxial MgCaO as gate dielectric”, 73th Device Research Conference (DRC), 2015, 57-58, Oral Presentation.  

(11)  Hong Zhou, Xiabing Lou, Kelson D. Chabak, R. G. Gordon, and Peide D. Ye, “AlGaN/GaN MOSHEMTs on Si (111) Substrate with High on/off Ratio Low SS and High Off-state Breakdown Voltage Enabled by ALE Single Crystalline MgCaO Gate Dielectric”, 46th IEEE Semiconductor Interface Specialists, Conference (SISC), 2015, Oral Presentation.

(12)  Hong Zhou and Peide D. Ye, “Achieving of Ultra High Electron Density on GaN Surface by Ionic Liquid Gating”, 45th IEEE Semiconductor Interface Specialists, Conference (SISC), 2014.  

(13)  Hong Zhou, Nathan J. Conrad, Shiping Guo, and Peide D. Ye, “Demonstration of InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility-Transistors with ALD La1.8Y0.2O3/Al2O3 as Gate Insulator”, 44th IEEE Semiconductor Interface Specialists, Conference (SISC), 2013.   

(14)  Kerry Maize, Hong Zhou, Peide D. Ye, and Ali Shakouri, “High resolution thermal imaging of pre-breakdown in power AlGaN/GaN MOSHEMTs”, Reliability Physics Symposium (IRPS), 2017 International, 5C-3.1-5C-3.7.   

(15)  M. Bhuiyan, H. Zhou, X. Lou, R. Jiang, X. Gong, H. Gong, E. X. Zhang, R. G. Gordon, R. A. Reed, D. M. Fleetwood, P. Ye and T. P. Ma, “Total ionizing dose study of GaN based HEMTs and MOSHEMTs: effects of channel thickness and epitaxial MgCaO as gate dielectric”, IEEE Nuclear and Space Radiation Effects Conference (NSREC), 2017. 

(16)  LM Yang, G Qiu, MW Si, AR Charnas, CA Milligan, DY Zemlyanov, H Zhou, YC Du, YM Lin, W Tsai, Qing Paduano, M Snure, PD Ye, “Few-layer black phosporous PMOSFETs with BN/Al2O3 bil[ant]ayer gate dielectric: Achieving Ion= 850μA/μm, gm= 340μS/μm, and Rc= 0.58 kΩ• μm”, Electron Devices Meeting (IEDM), 2016 IEEE International, 5.5.1-5.5.4.  

(17)  M. Bhuiyan, X. Lou, X. Gong, H. Zhou, K. Ni, R. Jiang, H. Gong, E. X. Zhang, R. G. Gordon, R. A. Reed, D. M. Fleetwood, P. Ye and T. P. Ma, “Radiation induced charge trapping in crystalline La2O3 gate dielectric grown on GaAs”, 47th IEEE Semiconductor Interface Specialists, Conference (SISC), 2016.  

(18)  M. Bhuiyan, H. Zhou, S.-J. Chang, X. Lou, X. Gong, K. Ni, R. Jian, H. Gong, E. X. Zhang, C.-H. Won, R. G. Gordon, J.-W. Lim, J.-H. Lee, R. A. Reed, D. M. Fleetwood, P. Ye and T. P. Ma, “Total ionizing dose effects on GaN-based HEMTs and MOSHEMTs: Effects of channel thickness and crystalline MgCaO as gate dielectric”, 47th IEEE Semiconductor Interface Specialists, Conference (SISC), 2016.  

(19)  Sami Alghamdi, Hong Zhou, Mengwei Si, and Peide D. Ye, “Comparative study of the Al2O3/β-(-201)Ga2O3 and Al2O3/β-(010)Ga2O3 interfaces through photo-assisted C-V measurements”, 47th IEEE Semiconductor Interface Specialists, Conference (SISC), 2016.  

(20)  Heng Wu, Wei Luo, Hong Zhou, Mengwei Si, Jinyun Zhang, Peide D. Ye, “First experimental demonstration of Ge 3D FinFET CMOS circuits”, in VLSI Symp. Tech. Dig., Jun. 2015, T58-T59.  

(21)  Heng Wu, Mengwei Si, Hong Zhou, Peide D. Ye, “Deep sub-100 nm Ge CMOS devices on Si with the recessed S/D and channel”, Electron Devices Meeting (IEDM), 2014 IEEE International, 16.7. 1-16.7. 4.  

(22)  Adam Neal, Hong Zhou, Yuchen Du, Peide D. Ye, “Superconductivity in Quasi-2D Electron System with Ultra-high Electron Density”, APS March Meeting Abstracts, 52009.  

(23)  Yuchen Du, Adam Neal, Hong Zhou, Peide D. Ye, “Weak Localization in Bulk Black Phosphorus and Few-Layer Phosphorene”, APS March Meeting Abstracts, L1002.