2001年后，在IEEE Trans. On Electron Device、Applied Physics A、Diomand and Related Material、Chinese Physics及国际会议上发表学术论文近五十篇，其中第一作者三十余篇，SCI、EI、ISTP检索二十余篇次。出版专业著作和教材各一本。

论文代表作：

[1] Hongliang Lv,Yimen Zhang,Yuming Zhang, Lin-an Yang, “Analytic model of I-V Characteristics of 4H-SiC MESFETs based on multiparameter mobility model”, IEEE Transactions on Electron Devices, Vol.51, No.7, 2004. pp.1065-1068 （EI No.: 04388356686，SCI No.: 000222279200004）

[2] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Physical based model for trapping and self-heating effects in 4H-SiC MESFETs”, Applied Physics A: Materials Science and Processing, Vol. 91, n 2, May, 2008, pp. 287～290. (EI: 081311173999, SCI: 000254086700015)

[3] Hongliang Lv, Yimen Zhang, Yuming Zhang, “ A comprehensive model of frequency dispersion in 4H-SiC MESFET”,  Solid-State Electronics, 2009, Vol. 53, No.3, pp285-291, (SCI: 00264731300007，EI: 20091011945754)

[4] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs”, Chinese Physics，2008, Vol. 17, No.4, pp1410-1414.(SCI：000255096900043，EI：081811226789)

[5] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Drain avalanche breakdown and gate instabilities in 4H-SiC MESFET’s”, Diamond and related materials, Vol. 13, No.9, pp. 1587-1591. 2004年9月 （EI Number:EIP04288262211, SCI No.:000222871000001）