[1] Ma Huihui, Zhang Junqin*, Zhao Bin, Wei Qun, Yang Yintang, First-principles study on mechanical and elastic properties of B_xAl_1-xP alloys, AIP ADVANCES, 7, p065007, 2017.

[2] Bin Zhao1, Junqin Zhang *, Huihui Ma , Qun Wei, Yintang Yang, Structure, electronic and mechanical properties of Ga_1-xB_xP alloys, Physica B: Physics of Condensed Matter, 2017.

[3] Ma Jinge, Zhang Junqin, Jia Xiaoxu, Yang Yintang, The Optical Gain of a Si-Based Lattice Matched Si_0.15Ge_0.621Sn_0.229 / Si_0.637Ge_0.018Sn_0.345 MQW Laser Research, Journal of Russian Laser, 38(1), p76-83, 2017. (SCI:000396460500007)

[4] Junqin Zhang, Yintang Yang, Hujun Jia, AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer la[ant]yer, CHINESE OPTICS LETTERS, 11(10), p1-3, 2013. (SCI:000327321800021; EI:20135017073923)

[5] Junqin Zhang, Yintang Yang, Hujun Jia, Changchun Chai, Hongfeng Zhu, The fabrication and research of 4H-SiC schottky metal-semiconductor-metal ultraviolet photodetectors, 2012 International Conference on Computer Science and Information Processing, p307-309, Xi’an, China, 2012.(EI:2012461566382)

[6] Maxime Vincent, Junqin Zhang, Carlo Carraro, Roya Maboudian, A SiC me[ant]tallization scheme using an ald protective la[ant]yer for harsh environment devices, The 25th International Conference on Micro Electro Mechanical Systems, p385-388, Paris, France, 2012. (SCI: 000312912800097; EI: 20121914992433)

[7] Qingyang Fan, Qun Wei, Haiyan Yan, Meiguang Zhang, Zixia Zhang, Junqin Zhang, Dongyun Zhang, Elastic and electronic properties of Pbca-BN: First-principles calculations, Computational Materials Science, 85, p80-87, 2014. (EI: 20140417225269, SCI)

[8] 张军琴, 付鹏飞, 何强, 刘梓良. 基于单片机STC89C52的无线可见光发射机, 半导体光电, 35(1)，p81-84，2014。

[9] Zhang Junqin, Yang Yintang, Lou Lifei, Zhao Yan. Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors. Chinese Optics Letters, 2008, 6(8), 615-618。（SCI:000258639800022; EI:083711541357）

[10] Zhang Junqin, Yang Yintang, Chai Changchun, Li Yuejin. Ohmic Contact Property of Ti/Al/Ni/Au on AlGaN/GaN Heterostructure for Application in Ultraviolet Detectors. 半导体学报, 2008, 29(11), 2187-2191.（EI:090311862771）

[11] 张军琴, 杨银堂, 卢艳, 娄利飞等. 4H-SiC MSM结构紫外探测器的模拟分析. 中国激光, 2008, 35(4),509-514.（EI:082211286462）