期刊论文：

[1]曹艳荣; 杨毅; 曹成; 何文龙; 郑雪峰; 马晓华; 郝跃 Recovery of PMOSFET NBTI under different conditions Chinese Physics B, 09期, pp 488-492, 2015/9/15.  
[2]Lv, Ling; Ma, Xiaohua; Xi, He; Liu, Linyue; Cao, Yanrong; Zhang, Jincheng; Shan, Hengsheng; Hao, Yue Theoretical analysis of proton irradiation effects on AlGaN/GaN high-electron-mobility transistors Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 33(5), pp 051212-1-051212-6, 2015/9/1.  
[3]Sun Wei-Wei; *Zheng Xue-Feng; Fan Shuang; Wang Chong; Du Ming; Zhang Kai; Chen Wei-Wei; Cao Yan-Rong; Mao Wei; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress Chinese Physics B, 24(1), 2015/1.
[4]*Cao Yan-Rong; He Wen-Long; Cao Cheng; Yang Yi; Zheng Xue-Feng; Ma Xiao-Hua; Hao Yue Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress Chinese Physics B, 23(11), 2014/11.
[5]*Cao,Yanrong；Yang,Yi；Cao,Cheng；He,Wenlong；Zheng,Xuefeng；Ma,Xiaohua；Hao,Yue PMOSFET器件NBTI在不同周期下的恢复研究 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology， ICSICT 2014， 2014/10/28-2014/10/31， Guilin， China， 2014.

[6]*Lu Ling; Zhang Jin-Cheng; Li Liang; Ma Xiao-Hua; Cao Yan-Rong; Hao Yue Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors Acta Physica Sinica, 61(5), 2012/3.
[7]S.R. Xu; J.C. Zhang; Y.R. Cao; X.W. Zhou; J.S. Xue; Z.Y. Lin; J.C. Ma; F. Bao; Y. Hao Improvements in (112̅2) semipolar GaN crystal quality by graded superlattices Thin Solid Films, 520(6), pp 1909-1912, 2012/1/1.  
[8]Ling Lv; J.G. Ma; Y.R. Cao; J.C. Zhang; W. Zhang; L. Li; S.R. Xu; X.H. Ma; X.T. Ren; Y. Hao Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors Microelectronics Reliability, 51(12), pp 2168-2172, 2011/12.
[9]*Bi ZhiWei; Hao Yue; Feng Qian; Jiang TingTing; Cao YanRong; Zhang JinCheng; Mao Wei; Lu Ling; Zhang Yue The passivation mechanism of nitrogen ions on the gate leakage current of HfO2/AlGaN/GaN MOS-HEMTs Science China Physics, Mechanics & Astonomy, 54(12), pp 2170-2173, 2011/12.

[10]Bi Zhi-Wei; Hu Zhen-Hua; Mao Wei; *Hao Yue; Feng Qian; Cao Yan-Rong; Gao Zhi-Yuan; Zhang Jin-Cheng; Ma Xiao-Hua; Chang Yong-Ming; Li Zhi-Ming; Mei Nan Investigation of passivation effects in AlGaN/GaN me[ant]tal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study Chinese Physics B, 20(8), 2011/8.

[11]S.R. Xu; J.C. Zhang; L.A. Yang; X.W. Zhou; Y.R. Cao; J.F. Zhang; J.S. Xue; Z.Y. Liu; J.C. Ma; F. Bao; Y. Hao Defect reduction in (1 1 2̄ 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interla[ant]yers Journal of Crystal Growth, 327(1), pp 94-97, 2011/7/15.

[12]*Ma Xiao-Hua; Cao Yan-Rong; Hao Yue; Zhang Yue Hot carrier injection degradation under dynamic stress Chinese Physics B, 20(3), 2011/3.

[13]*Cao Yan-Rong; Ma Xiao-Hua; Hao Yue; Zhu Min-Bo; Tian Wen-Chao; Zhang Yue Negative Bias Temperature Instability "Recovery" under Negative Stress Voltage with Different Oxide Thicknesses Chinese Physics Letters, 28(1), 2011/1.  

[14]*Wenchao, Tian; Yanrong, Cao; Hao, Sun Simulation of reconfigurable antenna based on RF switch 2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2011, 2011/8/8-2011/8/11, pp 482-484, Shanghai, China, 2011.

[15]*Wenchao, Tian; Yanrong, Cao; Hongming, Wang Analysis of reconfigurable antenna with K and Ku wave bands based on RF switch 2011 International Symposium on Advanced Packaging Materials, APM 2011, 2011/10/25-2011/10/28, pp 109-111, Xiamen, China, 2011.

[16]S.R. Xu; Y. Hao; J.C. Zhang; Y.R. Cao; X.W. Zhou; L.A. Yang; X.X. Ou; K. Chen; W. Mao Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by me[ant]tal-organic chemical vapor deposition 
Journal of Crystal Growth, 312(23), pp 3521-3524, 2010/11/15.

[17]*Ma Xiao-Hua; Cao Yan-Rong; Hao Yue Study on the negative bias temperature instability effect under dynamic stress Chinese Physics B, 19(11), 2010/11.

[18]*Xu Sheng-Rui; Hao Yue; Zhang Jin-Cheng; Zhou Xiao-Wei; Cao Yan-Rong; Ou Xin-Xiu; Mao Wei; Du Da-Chao; Wang Hao The etching of a-plane GaN epil[ant]ayers grown by me[ant]tal-organic chemical vapour deposition Chinese Physics B, 19(10), 2010/10.

[19]*Cao Yan-Rong; Ma Xiao-Hua; Hao Yue; Tian Wen-Chao The study on mechanism and model of negative bias temperature instability degradation in P-channel me[ant]tal-oxide-semiconductor field-effect transistors Chinese Physics B, 19(9), 2010/9.  

[20]*Xu ShengRui; Zhou XiaoWei; Hao Yue; Yang LiNan; Zhang JinCheng; Mao Wei; Yang Cui; Cai MaoShi; Ou XinXiu; Shi LinYu; Cao YanRong Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire Science in China - Series E: Technological Sciences, 53(9), pp 2363-2366, 2010/9.  

[21]*Cao, Yan-Rong; Ma, Xiao-Hua; Hao, Yue; Tian, Wen-Chao The study on mechanism and model of Negative Bias Temperature Instability degradation in P-channel me[ant]tal-oxide-semiconductor field-effect transistors Chinese Physics B, 19(9), pp 097306-1-097306-6, 2010/9.

[22]*Xu, Shengrui; Zhou, Xiaowei; Hao, Yue; Yang, Linan; Zhang, Jincheng; Mao, Wei; Yang, Cui; Cai, Maoshi; Ou, Xinxiu; Shi, Linyu; Cao, Yanrong Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire Science in China - Series E: Technological Sciences, 53(9), pp 2363-2366, 2010/9.  

[23]*Ma Xiao-Hua; Gao Hai-Xia; Cao Yan-Rong; Chen Hai-Feng; Hao Yue The Anomalous Effect of Interface Traps on Generation Current in Lightly Doped Drain nMOSFET's Chinese Physics Letters, 27(5), 2010/5.  

[24]*Cao Yan-Rong; Ma Xiao-Hua; Hao Yue; Hu Shi-Gang Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel me[ant]tal-oxide-semiconductor field-effect transistor Chinese Physics B, 19(4), 2010/4.  

[25]*Cao Yan-Rong; Ma Xiao-Hua; Hao Yue; Tian Wen-Chao Effect of Channel Length and Width on NBTI in Ultra Deep Sub-Micron PMOSFETs Chinese Physics Letters, 27(3), 2010/3.  

[26]*Zhang, Yue; Li, Miao; Li, Yan-Feng; Ma, Xiao-Hua; Cao, Yan-Rong; Hao, Yue An improved static NBTI model with physical geometry scaling 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010/11/1-2010/11/4, pp 1624-1626, Shanghai, China, 2010.

[27]*Hu Shi-Gang; Hao Yue; Ma Xiao-Hua; Cao Yan-Rong; Chen Chi; Wu Xiao-Feng Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature Chinese Physics B, 18(12), pp 5479-5484, 2009/12.

[28]*Ma, X. H.; Cao, Y. R.; Gao, H. X.; Chen, H. F.; Hao, Y. Behaviors of gate induced drain leakage stress in lightly doped drain n-channel me[ant]tal-oxide-semiconductor field-effect transistors Applied Physics Letters, 95(15), 2009/10/12.

[29]S.R. Xu; Y. Hao; J.C. Zhang; X.W. Zhou; L.A. Yang; J.F. Zhang; H.T. Duan; Z.M. Li; M. Wei; S.G. Hu; Y.R. Cao; Q.W. Zhu; Z.H. Xu; W.P. Gu Improvements in a-plane GaN crystal quality by AlN/AlGaN superlattices la[ant]yers Journal of Crystal Growth, 311(14), pp 3622-3625, 2009/7/1.  

[30]*Cao Yan-Rong; Hao Yue; Ma Xiao-Hua; Hu Shi-Gang Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel me[ant]tal-oxide-semiconductor field-effect transistors Chinese Physics B, 18(1), pp 309-314, 2009/1.

[31]*Hu Shi-Gang; Hao Yue; Ma Xiao-Hua; Cao Yan-Rong; Chen Chi; Wu Xiao-Feng Hot-Carrier Stress Effects on GIDL and SILC in 90nm LDD-MOSFET with Ultra-Thin Gate Oxide Chinese Physics Letters, 26(1), 2009/1.

[32]*Hu, Shigang; Hao, Yue; Cao, Yanrong; Ma, Xiaohua; Wu, Xiaofeng; Chen, Chi; Zhou, Qingjun Degradation of ultra-thin gate oxide LDD NMOSFET under GIDL stress Chinese Journal of Semiconductors, 30(4), pp 044004-1-044004-4, 2009.

[33]*Hu Shi-Gang; Cao Yan-Rong; Hao Yue; Ma Xiao-Hua; Chen Chi; Wu Xiao-Feng; Zhou Qing-Jun Degradation of Ultra-Thin Gate Oxide NMOSFETs under CVDT and SHE Stresses Chinese Physics Letters, 25(11), pp 4109-4112, 2008/11.

[34]*Hu, Shigang; Hao, Yue; Ma, Xiaohua; Cao, Yanrong; Chen, Chi; Wu, Xiaofeng Degradation of nMOS and pMOSFETs with ultrathin gate oxide under DT stress Pan Tao Ti Hsueh Pao/chinese Journal of Semiconductors, 29(11), pp 2136-2142, 2008/11.  

[35]*Cao Yan-Rong; Hu Shi-Gang; Ma Xiao-Hua; Hao Yue Mechanism of NBTI recovery under negative voltage stress 
Chinese Physics Letters, 25(9), pp 3393-3396, 2008/9.

[36]Cao, Yan-Rong; *Hao, Yue; Ma, Xiao-Hua; Yu, Lei; Hu, Shi-Gang SILC during NBTI stress in PMOSFETs with ultra-thin SiON gate dielectrics Chinese Physics Letters, 25(4), pp 1427-1430, 2008/4.

[37]*Chen, Hai-Feng; Hao, Yue; Ma, Xiao-Hua; Cao, Yan-Rong; Gao, Zhi-Yuan; Gong, Xin Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress Chinese Physics, 16(10), pp 3114-3119, 2007/10/1.  

[38]*Cao, Yanrong; Ma, Xiaohua; Hao, Yue; Yu, Lei; Zhu, Zhiwei; Chen, Haifeng Models and related mechanisms of NBTI degradation of 90 nm pMOSFETs Pan Tao Ti Hsueh Pao/chinese Journal of Semiconductors, 28(5), pp 665-669, 2007/5.

[39]Chen, Hai-Feng; Hao, Yue; Ma, Xiao-Hua; Tang, Yu; Meng, Zhi-Qin; Cao, Yan-Rong; Zhou, Peng-Ju Characteristics of degradation under GIDL stress in ultrathin gate oxide LDD nMOSFET's Acta Physica Sinica, 56(3), pp 1662-1667, 2007/3.

[40]Zhu, Zhi-Wei; Hao, Yue; Ma, Xiao-Hua; Cao, Yan-Rong; Liu, Hong-Xia Investigation of snapback stress induced gate oxide defect for NMOSFET's in 90 nm technology Acta Physica Sinica, 56(2), pp 1075-1081, 2007/2.  

[41]*Chen, Haifeng; Hao, Yue; Zhu, Zhiwei; Ma, Xiaohua; Cao, Yanrong Investigation of gate-induced drain leakage current in ultra-thin gate oxide LDD nMOSFET's ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, 2006/10/23-2006/10/26, pp 1159-1161, Shanghai, China, 2007.

[42]*Ma, Xiao-Hua; Hao, Yue; Wang, Jian-Ping; Cao, Yan-Rong; Chen, Hai-Feng New aspects of HCI test for ultra-short channel n-MOSFET devices Chinese Physics, 15(11), pp 2742-2745, 2006/11/1.  

[43]Ma, Xiao-Hua; Hao, Yue; Chen, Hai-Feng; Cao, Yan-Rong; Zhou, Peng-Ju The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress Acta Physica Sinica, 55(11), pp 6118-6122, 2006/11.

[44]*Cao, Yanrong; Ma, Xiaohua; Hao, Yue; Yu, Lei Characteristics of groove-gate MOSFETs Pan Tao Ti Hsueh Pao/chinese Journal of Semiconductors, 27(11), pp 1994-1999, 2006/11.  

[45]*Chen, Haifeng; Ma, Xiaohua; Hao, Yue; Cao, Yanrong; Huang, Jianfang; Wang, Wenbo; Li, Kang Characteristics of Isub,max stress in 90 nm-technology nMOSFETs Pan Tao Ti Hsueh Pao/chinese Journal of Semiconductors, 26(12), pp 2411-2415, 2005/12.

[46] Gorchichko M; Cao Y R*; Zhang E X; Yan D W; Gong H Q; Zhao S M; Wang P; Jiang R; Liang C D; Fleetwood D M; Schrimpf R D; Reed R A; Linten; Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics, IEEE Transactions on Nuclear Science, 2020, 67(1): 245-252.

[47] Zhu T; Zheng X F*; Cao Y R*; Wang C; Mao W; Wang Y Z; Mi M H; Wu M; Mo J H; Ma X H; Hao Y; Study on the effect of diamond layer on the performance of double-channel AlGaN/GaN HEMTs, Semiconductor Science and Technology, 2020, 35(3).

[48] Ling Lv, Xiaoyao Yan, Yanrong Cao, Qing Zhu, Ling Yang, Xiaowei Zhou, Xiaohua Ma, Yue Hao, Significant Degradation of AlGaN/GaN High-Electron Mobility Transistors with Fast and Thermal Neutron Irradiation, IEEE Transactions on Nuclear Science，2019, 66(6), 886-891.

[49] Ling Lv, Peixian Li, Xiaohua Ma, Linyue Liu, Ling Yang, Xiaowei Zhou, Jincheng Zhang, Yanrong Cao, Zhen Bi, Teng Jiang, Qing Zhu and Yue Hao, Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes, IEEE Transactions on Nuclear Science，2017, 64(1), 643-647.

[50] Xuefeng Zheng, Zhenling Tang, Ling Lv, Dandan Bai, Chong Wang, Wei Mao , Yanrong Cao, Xiaohua Ma and Yue Hao, A novel AlGaN/GaN Schottky barrier diode with partial p-AlGaN cap layer and recessed dual-metal anode for high breakdown and low turn-on voltage, Semiconductor Science and Technology, 35 (2020) 015018.

会议论文：

（1）  Mariia Gorchichko, Yanrong Cao*, Daniel M. Fleetwood, Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics，NSREC 2019，San Antonio, Texas – USA

（2）  曹艳荣，张裴，王锐，吕玲，郑雪峰，马晓华Radiation Effect Mechanism in SOI FinFETs ICREED-2019，5.30-31，重庆

（3）  曹艳荣，王锐，张裴，吕玲，郑雪峰，马晓华Single Event Effect of Bulk FinFETs ICREED-2019，5.30-31，重庆

（4）  胡从振，曹艳荣，冯薇，吕玲，郑雪峰，马晓华SOI FinFET单粒子效应研究ICREED-2018，5.7-11，北京

（5）  冯薇，曹艳荣，胡从振，吕玲，郑雪峰，马晓华SOI FinFET单粒子效应研究ICREED-2018，5.7-11，北京

（6）  谢书浩，曹艳荣*，张健行，李鹏，张亚松，朱青，吕玲，杨凌，习鹤，马晓华，郝跃，Vth-instability of enhancement-mode Al2O3-AlGaN/GaN MOS-HEMTs: The Effects of Fluorine Plasma Treatment，IWRMN-EDHE 2017，2017.5.22 -2017.5.24，成都

（7）  张健行，曹艳荣*，谢书浩，张亚松，朱青，吕玲，杨凌，习鹤，马晓华，郝跃，Total Ionizing Dose Radiation Effects on SOI FinFETT: The Impact of Coupling, Fin-Width and Structure，IWRMN-EDHE 2017，2017.5.22-2017.5.24，成都

（8）  曹艳荣，张亚松，张健行，谢书浩，朱青，吕玲，杨凌，习鹤，马晓华，郝跃，Reliability of the Fluorine-Plasma Treated AlGaN GaN HEMTs under On-State Overdrive Stress：The Impact of Stress Bias Voltage，IWRMN-EDHE 2017， 2017.5.22-2017.5.24，成都

（9） 曹艳荣，戴峰，曹成，张亚松，李鹏，马晓华，郝跃，Effect of channel length on hot-carrier injection in NMOSFET，IEEE ICSICT 2016，2016.10.25-2016.10.28，杭州

（10）张亚松，曹艳荣*，李鹏，戴峰，朱青，吕玲，马晓华，郝跃，Investigation of the reverse voltage stress on the fluorine plasma treated AlGaN/GaN Schottky barrier diodes，IEEE ICSICT 2016，2016.10.25-2016.10.28，杭州

（11）李鹏，曹艳荣*，戴峰，张亚松，朱青，吕玲，马晓华，郝跃，Reliability of the fluorine-plasma treated AlGaN/GaN Schottky barrier diodes under reverse voltage stress，IEEE ICSICT 2016，2016.10.25-2016.10.28，杭州

（12）Yanrong Cao, Yi Yang, Cheng Cao, Wenlong He, Xuefeng Zheng, Xiaohua Ma, Yue Hao，RECOVERY OF PMOSFET NBTI AT DIFFERENT CYCLES，IEEE ICSICT 2014.

学术专著：

(1) 朱敏波，曹艳荣，田锦，电子设备可靠性工程，西安电子科技大学出版社，2016.4.1.

申请专利：

[1]毛维；郝跃；杨翠；李洋洋；王冲；郑雪峰；杜鸣；刘红侠；曹艳荣 绝缘栅型直角源场板高电子迁移率器件及其制作方法 2015/3/11, 陕西, CN201410658088.6. 

[2]毛维；葛安奎；郝跃；边照科；石朋毫；张进成；马晓华；张金风；杨林安；曹艳荣 介质调制复合交叠栅功率器件 
2015/3/4, 陕西, CN201410658234.5. 

[3]郑雪峰；范爽；孙伟伟；张建坤；康迪；王冲；杜鸣；曹艳荣；马晓华；郝跃 HEMT器件栅泄漏电流中台面泄漏电流的测试方法 2014/9/24, 陕西, CN201410319025.8. 

[4]郑雪峰；范爽；康迪；王冲；张建坤；杜鸣；毛维；曹艳荣；马晓华；郝跃 测试HEMT器件体泄漏电流和表面泄漏电流的方法 2014/9/24, 陕西, CN201410317290.2.

[5]曹艳荣；杨毅；郝跃；马晓华；田文超；许晟瑞；郑雪峰 一种测试MOS器件沟道不均匀损伤的方法 2014/8/13, 陕西, CN201410228195.5. 

[6]田文超；阮红芳；杨银堂；曹艳荣 折梁屈曲射频微开关 2011/11/16, 陕西, 中华人民共和国国家知识产权局, CN201110075734.2.

[7]郝跃；许晟瑞；薛军帅；周小伟；张进成；曹艳荣；蔡冒世；王昊 基于γ面LiAlO2衬底上非极性m面GaN的MOCVD生长方法 2010/12/1, 陕西, 中华人民共和国国家知识产权局, CN201010209568.6.

[8]郝跃；许晟瑞；张进成；杨林安；王昊；陈珂；曹艳荣；杨传凯 基于c面SiC衬底上极性c面GaN的MOCVD生长方法  
2010/12/1, 陕西, 中华人民共和国国家知识产权局, CN201010209567.1.

[9]马晓华；曹艳荣；郝跃；高海霞；王冲；杨凌 AlGaN/GaN高电子迁移率晶体管及其制作方法 2010/10/6, 陕西, 中华人民共和国国家知识产权局, CN201010120734.5.

[10]王冲；郝跃；马晓华；张进城；曹艳荣；杨凌 全透明AlGaN/GaN高电子迁移率晶体管及其制作方法 2010/7/7, 陕西, 中华人民共和国国家知识产权局, CN201010013536.9. 

[11]马晓华；郝跃；曹艳荣；王冲；高海霞；杨凌 AlGaN/GaN绝缘栅高电子迁移率晶体管及其制作方法 2010/5/19, 陕西, 中华人民共和国国家知识产权局, CN200910218717.2. 

[12] 吕玲；严肖瑶；习鹤；曹艳荣；马晓华；张进成；一种改善AlGaN/GaN HEMT器件电学性能的方法，CN201811088560.1.

[13] 曹艳荣; 张亚松; 谢书浩; 张健行; 高海霞; 许晟瑞; 郑雪峰; 吕玲; 习鹤; 杨凌; 马晓华, 氟注入增强型AlGaN/GaN高电子迁移率晶体管及其制作方法, CN201710461678.3

[14] 毛维；边照科；丛冠宇；郝跃；王冲；张进成；曹艳荣，;基于漏场板的电流孔径异质结晶体管及其制作方法，CN201710198826.7

[15] 吕玲；王少波；杜林；马晓华；张进成 ；曹艳荣；习鹤；郝跃；一种硅基倒置微带线结构及其制作方法，CN201611185444.2

[16] 曹艳荣；何文龙；张亚松；李鹏；戴峰；马晓华；郝跃；郑雪峰；吕玲；习鹤；杨眉；毛维；许晟瑞；薄势垒增强型AlGaN/GaN高电子迁移率晶体管及其制作方法，CN201610255919.4，