2017年6月后

1: Yachao Zhang, Jincheng Zhang, Yue Hao, et al. Studies on the InAlN/InGaN/InAlN/InGaN double channel heterostructures with low sheet resistance, Applied Physics Letters, 2017

2: Yachao Zhang, Jincheng Zhang, Yue Hao, et al. High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels, Applied Physics Letters, 2018

3: Yachao Zhang, Jincheng Zhang, Yue Hao, et al. High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier, Applied Physics Letters, 2019

4: Yachao Zhang, Jincheng Zhang, Yue Hao, et al. Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate, Physica Status Solidi-Rapid Research Letters, 2019

7: Yachao Zhang, Jincheng Zhang, Yue Hao, et al. InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance, Applied Physics Express, 2018

5: Yachao Zhang, Jincheng Zhang, Yue Hao, et al. Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition, Materials Research Bulletin, 2018

6: Yachao Zhang, Jincheng Zhang, Yue Hao, et al. Investigation of nitride lateral Schottky barrier diodes based on InGaN channel heterostructure, AIP Advances, 2020

8: Yachao Zhang, Jincheng Zhang, Yue Hao, et al. High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition, Chinese Physics B, 2018

2017年6月前

1: Yachao Zhang, Jincheng Zhang, Yue Hao, et al. Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition, Applied Physics Letters, 2015

2: Yachao Zhang, Jincheng Zhang, Yue Hao, et al. Superior transport properties of InGaN channel heterostructure with high channel electron mobility, Applied Physics Express, 2016

3: Yachao Zhang, Jincheng Zhang, Yue Hao, et al. Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition, AIP Advances, 2015

4: Yachao Zhang, Jincheng Zhang, Yue Hao, et al. Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition, Chinese Physics B, 2016