[1]  M. Yang, P. Hu, J. Q. Lu, Q. B. Lv, and S. W. Li, "Coupled interfaces for misreading avoidance and write current reduction in passive crossbar memory," Applied Physics Letters, vol. 98, p. 213501, 2011.

[2]  M. Yang, D. H. Bao, and S. W. Li, "Coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO₃/In memristive devices," Journal of Physics D: Applied Physics, vol. 46, p. 495111, 2013.

[3]  M. Yang, N. Qin, L. Z. Ren, Y. J. Wang, K. G. Yang, F. M. Yu, W. Q. Zhou, M. Meng, S. X. Wu, D. H. Bao, and S. W. Li, "Realizing a family of transition-me[ant]tal-oxide memristors based on volatile resistive switching at a rectifying me[ant]tal/oxide interface," Journal of Physics D: Applied Physics, vol. 47, p. 045108, 2014.

[4]  M. Yang, L. Z. Ren, and S. W. Li, "Direct evidences of filamentary resistive switching in Pt/Nb-doped SrTiO₃ junctions," Journal of Applied Physics, vol. 115, p. 134505, 2013.

[5]  L. Z. Ren, M. Yang, W. Q. Zhou, S. X. Wu, and S. W. Li, "Influence of Stress and Defect on Magnetic Properties of Mn₃O₄ Films Grown on MgAl₂O₄ (001) by Molecular Beam Epitaxy," The Journal of Physical Chemistry C, vol. 118, pp. 243, 2014.

[6]  L. M. Xu, M. Yang, X. Y. Li, P. Hu, and S. W. Li, "Effect of growth temperature on ferromagnetism in Mn: TiO₂ thin film grown on SrTiO₃: Nb substrate," sc[ant]ripta Materialia, vol. 63, pp. 113, 2010.

[7]  J. Q. Lu, M. Yang, P. Hu, Q. B. Lv, and S. W. Li, "Interface States Induced Temporary Resistance Changing Behavior in Pt/TiO₂/SrTi_0.993Nb_0.007O₃/Pt Structure," Journal of the Electrochemical Society, vol. 158, pp. H704, 2011.

[8]  L. Z. Ren, S. X. Wu, M. Yang, W. Q. Zhou, and S. W. Li, "Magnetic properties of Mn₃O₄ film under compressive stress grown on MgAl₂O₄ (001) by molecular beam epitaxy," Journal of Applied Physics, vol. 114, p. 053907, 2013.

[9]  F. M. Yu, Y. J. Liu, M. Yang, S. X. Wu, W. Q. Zhou, and S. W. Li, "Accompanying growth and room-temperature ferromagnetism of η-Mn₃N₂ thin films by molecular beam epitaxy," Thin Solid Films, vol. 531, pp. 228, 2013.

[10] L. M. Xu, X. J. Xing, M. Yang, X. Y. Li, S. X. Wu, P. Hu, J. Q. Lu, and S. W. Li, "Laser reactivation of Room-T c ferromagnetism in Mn-doped insulating TiO₂ thin films," Applied Physics A: Materials Science & Processing, vol. 98, pp. 417, 2010.

[11] Q. B. Lv, S. X. Wu, J. Q. Lu, M. Yang, P. Hu, and S. W. Li, "Conducting nanofilaments formed by oxygen vacancy migration in Ti/TiO₂/TiN/MgO memristive device," Journal of Applied Physics, vol. 110, p. 104511, 2011.

[12] P. Hu, X. Y. Li, J. Q. Lu, M. Yang, Q. B. Lv, and S. W. Li, "Oxygen deficiency effect on resistive switching characteristics of copper oxide thin films," Physics Letters A, vol. 375, pp. 1898, 2011.

[13] F. M. Yu, L. Z. Ren, M. Meng, Y. J. Wang, M. Yang, S. X. Wu, and S. W. Li, "Growth and magnetic property of antiperovskite manganese nitride films doped with Cu by molecular beam epitaxy " Journal of Applied Physics vol. 115, p. 133911, 2014.

[14] X. Y. Li, S. X. Wu, P. Hu, X. J. Xing, Y. J. Liu, Y. Yu, M. Yang, J. Q. Lu, S. W. Li, and W. Liu, "Structures and magnetic properties of p-type Mn: TiO₂ dilute magnetic semiconductor thin films," Journal of Applied Physics, vol. 106, p. 043913, 2009.