在国内重要学术期刊、国际会议上发表学术论文数十篇，SCI、EI检索十余篇，

1.  Yuan, Hao; Tang, Xiaoyan; Song, Qingwen; Zhang, Yimen; Zhang, Yuming; Yang, Fei; Niu, Yingxi: “Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes”, Solid-State Electronics, v 103, January 2015, p 83-89, EI: 201447237058, SCI: WOS:000346547400014

2.  Yuan Hao, Tang Xiaoyan, Zhang Yimen, Zhang Yuming, Lv Hongliang, Wang Yuehu,Zhou Yufei, Song Qingwen: “The fabrication of 4H-SiC Floating Junction SBDs(FJ_SBDs)”, Materials Science Forum, Vols. 778-780, 2014, pp. 812-815, EI: 20141217488179

3.  Yuan Hao, Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Song Qing-Wen, Yang Fei, and Wu Hao: “4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination”, Chinese Physics B, Vol. 23, No. 5, 2014, pp. 057102-1～057102-4, EI: 20142117737747，SCI：000336081900070

4.  杨帅，汤晓燕，张玉明，宋庆文，张义门：“电荷失配对SiC半超结垂直双扩散金属氧化物半导体场效应管击穿电压的影响”，物理学报, Vol. 63, No. 20, 2014, pp. 208501-1～208501-6, EI: 20145200366364, SCI: WOS:000344616500048

5.  汤晓燕, 戴小伟, 张玉明,张义门: “套刻偏差对4H-SiC浮动结JBS二极管的影响研究”, 物理学报,Vol. 61, No. 8, 2012, pp.088501-1~088501-5, SCI:000303900900066

6. Tang Xiao-Yan, Song Qing-Wen, Zhang Yu-Ming, Zhang Yi-Men, Jia Ren-Xu, Lü Hong-Liang, Wang Yue-Hu: “Investigation of 4H-SiC metal-insulation-semiconductor structure with Al2O3/SiO2 stacked dielectric”, Chinese Physics B, Vol. 21, No. 8, 2012, pp. 087701-1~087701-4, EI:20123315337498, SCI:000307501600078

7.  汤晓燕，张玉明，张义门，Study of 4H-SiC Epitaxial n-Channel MOSFET，Chinese physics B，2010，19(4)，：47204   

8.  汤晓燕，张玉明，张义门，4H-SiC n-MOSFET新型SiC反型层迁移率模型，西安电子科技大学学报，2011.38(1): 42-46

9.  汤晓燕，张义门，张玉明：“SiC 肖特基源漏MOSFET 的阈值电压”，物理学报，Vol.58, No.1, 2009, PP.494～497, SCI:UT ISI:000262834300077