学术论文
- Y.L. Wang, P.X. Li, X.Y. Zhang, S.R. Xu, X.W. Zhou*, J.X. Wu, W.K. Yue and Y. Hao Using Multi-layer Stacked AlGaN/GaN Structure to Improve Current Spreading Performance of Ultraviolet Light Emitting Diodes.. Materials. 13（2）, 454 (2020).
- Jinxing Wu , Peixian Li , Shengrui Xu ，Xiaowei Zhou* , Hongchang Tao , Wenkai Yue , Yanli Wang , Jiangtao Wu , Yachao Zhang and Yue Hao.Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates. Materials. 13（22），5188 (2020).
- Wang, Yan Li ; Li, Pei Xian; Xu, Sheng Rui ; Xiaowei Zhou* ; Zhang, Xin Yu; Jiang, Si Yu; Huang, Ru Xue; Liu, Yang; Zi, Ya Li; Wu, Jin Xing; Hao, Yue,Double superlattice structure for improving the performance of ultraviolet light-emitting diodes, Chinese Physics B, 2019.3, 28(3)：0~038502.
- Zhou Xiaowei, Xu Shengrui,Hao Yue.Luminescence of GaN grain with nonpolar and semipolar plane in relation to microstructural characterization.Chinese Physics B .Vol.21, No 6, 2012。
- Zhou Xiaowei,Li Peixian,Xu Shengrui,Hao Yue. Growth and electrical properties of high-quality Mg-doped p-type Al0.2Ga0.8N films. Journal of Semiconductors. Vol 30, No 4, 2009. (EI 20092212098763).
- 周小伟，李培咸，郝跃. 基于AlN基板的不同Al组份AlGaN材料的生长. 功能材料与器件学报. Vol 15,No 6, 2009.
- Zhang Yachao, Zhou Xiaowei, Xu Shengrui,Zhang jincheng,Hao Yue. Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition .Applied Physics Letters, 106, 152101 ,2015.