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学术论文
  1. T. T. Wang, X. Wang, X. B. Li, J. C. Zhang and J. P. Ao, “Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes,” Chinese Physics Letters, vol. 36, p. 057101, 2019.
  2. Y. Zhang, Y. Li, D. Ni, Z. Chen, X. Wang, Y. Bu, J. P. Ao, “Improvement of BiVO4 Photoanode Performance During Water Photo-Oxidation Using Rh-Doped SrTiO3 Perovskite as a Co-Catalyst,” Advanced Functional Materials, p. 1902101, 2019.
  3. L. Bai, J. Wen, Y. Tang, H. Wu, H. Zhang, X. Wang, W. He, R. Sun. “Synergic effect of graphene and core− shells structured Au NR@ SiO2@ TiO2 in dye-sensitized solar cells,” Nanotechnology, vol 30, p. 465401, 2019.
  4. M. Zheng, Y. Xu, X. Wang, G. Zhang, W. Li, J. Li, L. Zhang, H. Wu, Q. Lin, C. Liu. “ZnO-Based Ultraviolet Photodetectors with Tunable Spectral Responses,” Physica status solidi (RRL)-Rapid Research Letters, p. 1900441, 2019.
  5. T. F. Pu, X. B. Li, X. Wang, Y. Y. Bu, L. A. Li, J. P. Ao. “GaN Schottky Barrier Diodes with TiN Electrode for Microwave Power Transmission,” Materials Science Forum. Trans Tech Publications Ltd, vol. 954, pp. 126-132, 2019.
  6. X. Wang, L. Bai, H. Zhang, X. Su, H. Wu and C. Liu, “Ag nanoparticle surface-plasmon-resonance-enhanced electroluminescence from semipolar n-ZnO/p-GaN heterojunction light-emitting diodes,” Applied Physics Express, vol. 11, p. 102101, 2018.
  7. T. Pu, X. Wang, Q. Huang, T. Zhang, X. Li, L. Li and J. P. Ao, "Normally-off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process," IEEE Electron Device Letters, vol. 40, pp. 185-188, 2018.
  8. Y. Zhang, G. Han, H. Wu, X. Wang, Y. Liu, J. Zhang, H. Liu, H. Zheng, X. Chen, C. Liu and Y. Hao, “Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment,” Nanoscale Research Letters, vol. 13, p. 237, 2018.
  9. T. Zhang, T. Pu, T. Xie, L. Li, Y. Bu, X. Wang, and J. P. Ao, "Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors," Chinese Physics B, vol. 27, p. 78503, 2018.
  10. X. Wang, W. Wang, J. Wang, H. Wu, and C. Liu, "Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice," Scientific Reports, vol. 7, p. 44223, 2017.
  11. X. Wang, G. Zhang, Y. Xu, H. Wu, and C. Liu, "Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates," Nanoscale Research Letters, vol. 12, p. 145, 2017.
  12. X. Wang, X. Gan, G. Zhang, X. Su, M. Zheng, Z. Ai, H. Wu, and C. Liu, "The function of an In0.17Al0.83N interlayer in n-ZnO/ In0.17Al0.83N /p-GaN heterojunctions," Applied Surface Science, vol. 393, pp. 221-224, 2017.
  13. M. Zheng, G. Zhang, X. Wang, J. Wan, H. Wu, and C. Liu, "Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers.," Nanoscale Research Letters, vol. 12, p. 267, 2017.
  14. X. Su, G. Zhang, X. Wang, C. Chen, H. Wu, and C. Liu, "Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts," Nanoscale research letters, vol. 12, p. 469, 2017.
  15. G. Zhang, H. Wu, X. Wang, D. Zhang, T. Wang, and C. Liu, "Modulation of the dissipation factor in transparent AlZnO/ZrO2/AlZnO capacitors," Journal of Alloys and Compounds, vol. 690, pp. 777-782, 2017.
  16. X. Wang, G. Z. Zhang, Y. Xu, X. W. Gan, C. Chen, Z. Wang, Y. Wang, J. L. Wang, T. Wang, H. Wu, and C. Liu, "Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers," Nanoscale Research Letters, vol. 11, p.21, 2016.
  17. G. Zhang, H. Wu, X. Wang, T. Wang, and C. Liu, "Transparent capacitors with hybrid ZnO: Al and Ag nanowires as electrodes," Nanotechnology, vol. 27, p. 105204, 2016.