近年来发表EI或SCI检索论文如下:
1. 刘佳佳,雷天民,张玉明,陈得林,郭辉,张志勇. 锰掺杂浓度和位置对石墨烯磁性的影响. 西安电子科技大学学报. 2015 Vol. 42 (4): 76-80+106(自然科学版) . (EI: 20153501211708 ) .
2. 雷天民,吴胜宝,张玉明,刘佳佳,姜海青,张志勇. 空位缺陷对单层MoS2电子结构的影响 . 稀有金属材料与工程 . 2015,44 Vol.(3): 608-611 (SCI: 000352249000018 ) .
3. 雷天民, 吴胜宝,张玉明,郭辉,陈德林,张志勇. La、Ce、Nd掺杂对单层MoS2电子结构的影响 . 物理学报. 2014, 63 (6): 067301 doi: 10.7498/aps.63.067301. (SCI: 000335390500035 )
4. 雷天民,吴胜宝,张玉明,刘佳佳,郭辉,张志勇. 单层MoS2的电子结构及光学性质. 稀有金属材料与工程. 2013,42 Vol.(12): 2477-2480 (SCI: 000329332600012 )
5. Lei Tian-Min, Liu Jia-Jia, Zhang Yu-Ming, Guo Hui, and Zhang Zhi-Yong, Quantum explanation for magnetic properties of Mn-doped grapheme. Chin. Phys. B Vol. 22, No. 11 (2013) 117502 (SCI: 000327485400086 )
6. Deng Peng-Fei, Lei Tian-Min,Lu Jin-Jun,Liu Fu-Yan, Zhang Yu-Ming, Guo Hui, Zhang Yi-Men, Wang Yue-Hu,Tang Xiao-Yan. Fabrication of Thin Graphene la[ant]yers on a Stacked 6H-SiC Surface in a Graphite Enclosure[J].CHIN. PHYS. LETT. Vol. 30, No. 1 (2013) 018101. (SCI: 000313744500053)
7. Epitaxial graphene growth on 6H-SiC (0001) substrate by confinement controlled sublimation of silicon carbide, Advanced Materials Research, v 709, p 62-65, 2013 (EI: 20132916521115 )
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9. ,First-principle calculations for magnetism of Mn-doped grapheme. Advanced Materials Research, v 709, p 184-187, 2013 (EI: 20132916521142 )
10. Wang Dang-Chao, Zhang Yu-Ming), Zhang Yi-Men, Lei Tian-Min, Guo Hu, Wang Yue-Hu, Tang Xiao-Yan, Wang Hang. Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6H-SiC substrates[J]. Chinese Physics B,2012,03:480-483. (SCI: 000301341400084)
11. Wang Dang-Chao, Zhang Yu-Ming), Zhang Yi-Men, Lei Tian-Min, Guo Hu, Wang Yue-Hu, Tang Xiao-Yan, Wang Hang.. Raman analysis of epitaxial graphene grown on 4H-SiC (0001) substrate under low pressure condition[J]. Chinese Physics B,2011,12:443-446. (SCI: 000298493500068)
12. Wang Dang-Chao, Zhang Yu-Ming), Zhang Yi-Men, Lei Tian-Min, Guo Hu, Wang Yue-Hu, Tang Xiao-Yan, Wang Hang. Raman analysis of epitaxial graphene on 6H-SiC(000-1) substrates under low pressure environment[J]. Journal of Semiconductors, 2011,11:39-42. (EI: 20114714528634 )
13. 刘德福,雷天民,马卓,李颖,王旸. LTE系统中可配置FFT/IFFT的设计与实现[J]. 西安电子科技大学学报,2010,05:813-816+824. (EI: 20104813430689 )
14. Li Zhimin, Zhou Wancheng, Lei Tianmin, Luo Fa, Huang Yunxia,
已被EI或SCI检索期刊录用待发表的论文:
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