代表性期刊论文
1. C. Liu*, Z. Wang, Y. Zhang, H. Lu, Y. Zhang, Nanolaminated HfO2/Al2O3 Dielectrics for High-Performance Silicon Nanomembrane Based Field-Effect Transistors on Biodegradable Substrates. Advanced Materials Interfaces 2022 (Just accept).
2. C Liu*, Z Wang, H Lu, Y Zhang, D Liu, YM Zhang, Z Ma, J Zhao, L Guo, Atomic-layer-deposited HfO2/Al2O3 laminated dielectrics for bendable Si nanomembrane based MOS capacitors. Applied Physics Letters 114 (14), 142903, 2019.
3. C Liu*, H Lü*, T Yang, Y Zhang, Y Zhang, D Liu, Z Ma, W Yu, L Guo,Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate.Applied Surface Science 444, 474-479, 2018.
4. C Liu*, S June Cho, Y Hwan Jung, TH Chang, JH Seo, S Mikael, Y Zhang, et. al. Bendable MOS capacitors formed with printed In0.2Ga0.8As/GaAs/In0.2Ga0.8As tril[ant]ayer nanomembrane on plastic substrates. Applied Physics Letters 110 (13), 133505, 2017.
5. C Liu*, H Lu, Y Zhang, Y Zhang, Z Wang. Modulating the band alignment and current conduction mechanism of ZrO2/In0.2Ga0.8As gate stack by atomic-layer-deposited ZnO passivation layer. Thin Solid Films 714, 138385, 2020.
6. C Liu*, Z Wang, Y Zhang, H Lu, J Zhao, Y Zhang, L Guo，Capacitance-Voltage Investigation of HfO2/Al2O3 Bil[ant]ayered High-k Dielectrics on Si Nanomembrane. 2018 International Flexible Electronics Technology Conference (IFETC), 1-2.
7. C Liu, YM Zhang, YM Zhang, HL Lv, Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO2/p-GaAs metal-oxide-semiconductor capacitors. Journal of Applied Physics 116 (22), 222207, 2014.
8. L Chen, Z Yuming, Z Yimen, L Hongliang, L Bin,Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal–oxide–semiconductor capacitors. Journal of Semiconductors 36 (12), 124003, 2015.
9. L Chen*, Z Yu-Ming, Z Yi-Men, L Hong-Liang, Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor. Chinese Physics B 22 (7), 076701, 2013. (被引用超过20次)
10. L Chen, YM Zhang, HL Lu, YM Zhang，The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs，2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology （ICSICT) (获得最佳学生论文).