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Representative Publications

[1] C Liu*, Z Wang, H Lu, Y Zhang, D Liu, YM Zhang, Z Ma, J Zhao, L Guo, Atomic-layer-deposited HfO2/Al2Olaminated dielectrics for bendable Si nanomembrane based MOS capacitorsApplied Physics Letters 114 (14), 142903, 2019.
[2] C Liu*, H Lü*, T Yang, Y Zhang, Y Zhang, D Liu, Z Ma, W Yu, L Guo,Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate.Applied Surface Science 444, 474-479, 2018.  
[3] C Liu*, S June Cho, Y Hwan Jung, TH Chang, JH Seo, S Mikael, Y Zhang, et. al. Bendable MOS capacitors formed with printed In0.2Ga0.8As/GaAs/In0.2Ga0.8As trilayer nanomembrane on plastic substratesApplied Physics Letters 110 (13), 133505, 2017. 
[4] C. Liu, H. Lu, Y. Zhang, Y. Zhang, and Z. Wang, Modulating the band alignment and current conduction mechanism of ZrO2/In0.2Ga0.8As gate stack by atomic-layer-deposited ZnO passivation layer. Thin Solid Films 714, 138385, 2020.
[5] C. Liu, Y. Zhang. Z. Wang, J. Zhao, H. Lv, and Y. Zhang, Ion penetration model of SiO2/SiNx/SiO2 barrier trilayer for implantable electronics. 2019 International Flexible Electronics Technology Conference (IFETC), oral presentation.
[6]  C Liu*, Z Wang, Y Zhang, H Lu, J Zhao, Y Zhang, L GuoCapacitance-Voltage Investigation of HfO2/Al2OBilayered High-k Dielectrics on Si Nanomembrane2018 International Flexible Electronics Technology Conference (IFETC), 1-2.
[7] C Liu, YM Zhang, YM Zhang, HL Lv, Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO2/p-GaAs metal-oxide-semiconductor capacitors. Journal of Applied Physics 116 (22), 222207, 2014.  
[8]  L Chen*, Z Yu-Ming, Z Yi-Men, L Hong-Liang, Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitorChinese Physics B 22 (7), 076701, 2013. (Citation: 27)
[9] L Chen, Z Yuming, Z Yimen, L Hongliang, L Bin,Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal–oxide–semiconductor capacitorsJournal of Semiconductors 36 (12), 124003, 2015

[10] L Chen, YM Zhang, HL Lu, YM ZhangThe Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology ICSICT) (Best paper)