代表性论文成果：
2017 :
[1] Yang Li, Lin-An Yang, Hao Zou, Heng-Shuang Zhang, Xiao-Hua Ma, and Yue Hao, Substrate Integrated Waveguide Structural Transmission Line and Filter on Silicon Carbide Substrate, IEEE Electron Device Letters, 38(9), 1290-1293, 2017;
[2] Yang Li, Lin-An Yang, Lin Du, Kunzhe Zhang, and Yue Hao, Design of Millimeter-Wave Resonant Cavity and Filter Using 3-D Substrate-Integrated Circular Waveguide, IEEE Microwave and Wireless Components Letters, 27(8), 706-708, 2017;
[3] Yang Li, Lin-An Yang, Shao-bo Wang, Lin Du, and Yue Hao, Design of 3D filtering antenna for the application of terahertz, Electronics Letters, 53(1), 7-8, 2017;
2015-2016：
[1] Yang Dai, Lin'an Yang, Shengrui Xu and Yue Hao, Anisotropy Effects On The Performance Of Wurtzite GaN IMPATT Diodes, Applied Physics Express, 9(10),111004, 2016;
[2] Lin'an Yang, Yue Li, Ying Wang, Shengrui Xu, and Yue Hao, Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes, Journal of Applied Physics, 119(16), 164501,2016;
[3] Qing Chen, Lin'an Yang, Shulong Wang, and Yue Hao, Effect of temperature on avalanche region width and DC to RF conversion efficiency of the p+nn2n+ 4H–SiC impact avalanche transit time diodes, Applied Physics A, Vol.122, No.6, pp.536-1-7, 2016;
[4] Ying Wang, Lin'an Yang, Zhizhe Wang, Jinping Ao, and Yue Hao, The modulation of multi-domain and harmonic wave in a GaN planar Gunn diode by recess la[ant]yer, Semiconductor Science and Technology, 31(2), 025001, 2016;
[5] Ying Wang, Lin-An Yang, Zhi-Zhe Wang, Jin-Ping Ao, and Yue Hao, The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode, Physica Status Solidi (a), 213(5), pp.1252-1258, 2016;
[6] Yang Dai, Lin'an Yang, Qing Chen, Ying Wang, and Yue Hao, Enhancement of the performance of GaN IMPATT diodes by negative differential mobility, AIP Advances, 6(5), 055301, 2016;
[7] Ying Wang, Lin-An Yang, Zhi-Zhe Wang, and Yue Hao, Modulation of the domain mode in GaN-based planar Gunn diode for terahertz applications, Physica Status Solidi (c), 13(5-6), pp.382-385, 2016;
[8] Qing Chen, Lin’an Yang, Shulong Wang, Yue Zhang, Yang Dai, Yue Hao, Influence of the anisotropy on the performance of D-band SiC IMPATT diodes. Applied Physics A, Vol.118, No.4, pp.1219-1227, 2015;
2014年：
[1] Ying Wang, Lin'an Yang, Zhizhe Wang, Qing Chen, Yonghong Huang, Yang Dai, Haoran Chen, Hongliang Zhao, and Yue Hao,Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact. Journal of Applied Physics, 116(9), 094502, 2014;
[2] Haoran Chen, Lin'an Yang, and Yue Hao, Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes. Journal of Applied Physics, 116(7), 074510, 2014;
[3] Liang Li, Lin'an Yang*, Rongtao Cao, ShengRui Xu, Xiaowei Zhou, Junshuai Xue, Zhiyu Lin, Wei Ha, Jincheng Zhang, Yue Hao, Reduction of threading dislocations in N-polar GaN using a pseudomorphically grown graded – Al - fraction AlGaN interla[ant]yer. Journal of Crystal Growth, 387(1), pp.1-5, 2014;
[4] Li Liang , Yang Lin-An, Xue Jun-Shuai , Cao Rong-Tao, Xu Sheng-Rui, Zhang Jin-Cheng, and Hao Yue, Improvedcrystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interla[ant]yer grown on sapphire substrate using pulsed me[ant]tal organic chemical vapor deposition. Chinese Physics B, Vol.23, No.6, pp:067103, 2014;
2013年：
[1] Ying Wang, Lin-An Yang, Wei Mao, Shuang Long, and Yue Hao,Modulation of multi-domain in AlGaN/GaN HEMT-liked planar Gunn diode. IEEE Trans. Electron Devices, 60(5), 1600-1606, 2013;
[2] Haoran Chen, Lin’an Yang, Shuang Long, and Yue Hao, Reproducibility in the negative differential resistance characteristic of In0.17Al0.83N/GaN resonant tunneling diodes - Theoretical investigation. Journal of Applied Physics, 113(19), 194509, 2013;
[3] Liang Li, Lin'an Yang, Jincheng Zhang, and Yue Hao, Dislocation blocking by AlGaN hot electron injecting la[ant]yer in the epitaxial growth of GaN terahertz Gunn diode, Journal of Applied Physics, 114(10), 104508, 2013;
[4] Haoran Chen , Lin'an Yang , Xiaoxian Liu, Zhangming Zhu, Jun Luo , and Yue Hao, The impact of trapping centers on AlGaN/GaN resonant tunneling diode, IEICE Electronics Express, Vol.10, No.19, pp:1-6, 2013;
[5] L. Li, L.A. Yang, R.T. Cao, S.R. Xu, X.W. Zhou, J.S. Xue, Z.Y. Lin, W. Ha, J.C. Zhang,Y. Hao, Reduction of threading dislocations in N-polar GaN using a pseudomorphicaly grown graded-Al-fraction AlGaN interla[ant]yer,Journal of Crystal Growth 387, 1–5, 2014;
[6] L. Li, L.A. Yang, X.W. Zhou, J.C. Zhang, and Y. Hao, Point defect determination by photoluminescence and capacitance–voltage characterization in GaN terahertz Gunn diode, Chinese Physics B, Vol.22, No.8, pp:087103, 2013.
2012年：
[1] Lin’an Yang, Shuang Long, Xin Guo, and Yue Hao, A comparative investigation on sub-micrometre InN and GaN Gunn diodes working at terahertz frequency, Journal of Applied Physics, 111(10), 104514, 2012;
[2] Liang Li, Lin-An Yang, Jin-Cheng Zhang, Jun-Shuai Xue, Sheng-Rui Xu, Ling Lv, Yue Hao, and Mu-Tong Niu, Threading dislocation reduction in transit region of GaN terahertz Gunn diodes. Applied Physics Letters,100(07), 072104, 2012;
[3] Liang Li, Lin-An Yang, Jin-Cheng Zhang, Lin-Xia Zhang, Li-Sha Dang, Qian-Wei Kuang, Yue Hao, Point defect determination by eliminating frequency dispersion in C–V measurement for AlGaN/GaN heterostructure. Solid-State Electronics,68, 98-102, 2012;
2011年：
[1] Lin'an Yang, Hanbing He, Wei Mao, and Yue Hao, "Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode", Applied Physics Letters, Vol,99,No.15,153501,2011;
[2] Lin-An Yang, Yue Hao, Qingyang Yao, and Jincheng Zhang, “Improved Negative Differential Mobility Model of GaN and AlGaN for a Terahertz Gunn Diode,” IEEE Trans. Electron Devices，Vol.58, No.4, 1076-1083, 2011；
[3] Lin’an Yang, Wei Mao, Qingyang Yao, Qi Liu, Xuhu Zhang, Jincheng Zhang, and Yue Hao, “Temperature effect on the submicron AlGaN/GaN Gunn diodes for terahertz frequency”, Journal of Applied Physics, Vol.109, No.2, 024503, 2011;
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