一、近几年发表的学术论文：
[1] Hujun Jia, Yehui Luo,Hang Zhang, Ding Xing, Peimiao Ma，A novel 4H-SiC MESFET with serpentine channel for high power and high frequency applications，Superlattices and Microstructures，2017，101：315-322，SCI：000393245900036，EI：20165003114647
[2] Hujun Jia, Zhihui Yang, Yehui Luo，Improved double-recessed P-buffer 4H-SiC MESFETs with partial heavy doped channel，Materials Science in Semiconductor Processing，2016，56：213-216，SCI：000388085800030，EI：20163602775556
[3] Hujun Jia,Peimiao Ma,YehuiLuo,Zhihui Yang,Zhijiao Wang, Qiuyuan Wu,Mei Hu，A novel 4H-SiC MESFET with double upper gate and recessed p-buffer，Superlattices and Microstructures，2016，97：346-352，SCI：000385319200039，EI：20162902604518
[4] Hujun Jia, Hang Zhang, Yehui Luo, Zhihui Yang，Improved Multi-recessed 4H-SiC MESFETs with double-recessed p-buffer layer，Materials Science in Semiconductor Processing，2015，40：650-654，SCI：000363344600091,EI:20153001060000
[5] Hujun Jia, Ding Xing, Hang Zhang, Yingchun Yuan, Peimiao Ma, Yehui Luo ,RF characteristics for 4H-SiC MESFET with a clival gate，Materials Science in Semiconductor Processing，2015，40：777–780，SCI：000363344600110, EI: 20153101101486
[6] Hujun Jia, Hang Zhang, Ding Xing, Yehui Luo, Baoxing Duan, A novel 4H-SiC MESFET with ultrahigh upper gate ，Superlattices and Microstructures，2015，86：372-378，SCI：000362603100044, EI: 20153301166535
[7] Hujun Jia, Hang Zhang, Ding Xing, Peimiao Ma, Improved performance of 4H–SiC MESFETs with G-gate and recessed p-buffer layer，Superlattices and Microstructures，2015，85：551–556，SCI：000359873200060, EI: 20152600970241
[8] Hujun Jia, Ding Xing, Hang Zhang, Xiaoyan Pei, Zhelin Sun, Yingchun Yuan, A novel 4H-SiC MESFET with clival gate ，Superlattices and Microstructures，2015，83：29-34，SCI：000357141500004, EI: 20151300697567
[9] Hujun Jia, Xiaoyan Pei, Zhelin Sun, Hang Zhang, Improved performance of 4H-silicon carbide metal semiconductor field effect transistors with multi-recessed source/drain drift regions ，Materials Science in Semiconductor Processing，2015，31：240-244，SCI：000350513500034, EI: 20145200379705
[10] Hujun Jia, Yintang Yang, Hu Zhang，Improved L-gate 4H-SiC MESFETs with partial p-type spacer，Materials Science in Semiconductor Processing，2013，16：352-355，SCI：000316581400019，EI：20131316145057
[11] Hujun Jia, Hu Zhang，Yintang Yang, novel 4H-SiC MESFET with a L-gate and a partial p-type spacer，Materials Science in Semiconductor Processing，2011，1：2-5，SCI：000305111900002，EI：20122115046530
[12] Hujun Jia,Yintang Yang,Lianjin Zhang,Baoxing Duan，Improved Performance of 4H-SiC MESFET With Steped-Channel，Applied Mechanics and Materials，2013，271：21-25，EI：20130415941617
[13] Hujun Jia, Guodan Zhou, Yintang Yang, Baoxing Duan，The Effect of Oxide Fixed Charge on the Breakdown Characterisitcs of SiC lateral Super Junction Devices，Applied Mechanics Materials，2012，121-126：1585-1589，EI：20114714533476
[14] Jia Hujun,Sun Zhelin, Pei Xiaoyan，An improved 4H-SiC MESFET structure with stepped source field plate，Industrial Engineering and Management Science, HONG KONG, Aug. 08-09, 2014，pp.55-58，CPCI-S：000380497500011
[15] Jia Hujun ; Zhang Hang; Xing, Ding ; Ma, Peimiao，Improved Performance of 4H-SiC MESFETs with Triple-recessed Structure，2015 International Conference on Information Technology and Industrial Automation (ICITIA 2015)，Jul. 04-05,2015, Guangzhou China，pp.86-90，CPCI-S：000377607900013
[16] Hujun Jia,Peimiao Ma,Yehui Luo,Ding Xing,Hang Zhang,Zhijiao Wang and Qiuyuan Wu，Improved Clival Gate 4H-SiC MESFET with Recessed Drain Drift Region and Recessed p-buffer layer，2015 International Conference on Electrical,Electronics and Mechatronics,Dec.20-21, 2015, Thailand，pp.44-47，CPCI-S：000387957700011
[17] Hu-jun Jia , Zhi-hui Yang, Pei-miao Ma, Qiu-yuan Wu, Ye-hui Luo，A novel 4H–SiC MESFET with localized high-doped P-buffer layer，2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology(ICSICT) Proceedings，Oct.25-28, 2016，Hangzhou, China，P1-038
[18] Hu-jun JIA, Ye-hui LUO and Pei-miao MA，Improved Ultrahigh Upper Gate 4H-SiC MESFET with Serpentine Channel Structure，2016 International Conference on Computer, Mechatronics and Electronic Engineering，Nov. 20-21, 2016，Beijing China，pp.C062
二、已授权国家发明专利：
[1] 贾护军，范忱，毛周，李帅，双MOS结构的光电探测器，专利号：ZL201310039617.X，授权日期：2015.04.08
[2] 贾护军，成涛，范忱，谐振腔式的双MOS光电探测器，专利号：ZL201310043845.4，授权日期：2015.05.27
[3] 贾护军，李泳锦，李晓彦，邹姣，王志燕，成涛，垂直腔表面发射激光器的驱动器，专利号：ZL201310374491.1，授权日期：2016.04.13
[4] 贾护军，裴晓延，孙哲霖，4H-SiC金属半导体场效应晶体管，专利号：ZL201410181931.6，授权日期：2016.11.23
[5] 贾护军，张航，邢鼎，具有阶梯缓冲层结构的4H-SiC金属半导体场效应晶体管，专利号：ZL201410587447.3，授权日期：2017.06.30
[6]贾护军，邢鼎，张航，具有坡形栅极的4H-SiC金属半导体场效应晶体管及其制作方法，专利号：ZL201410587502.9，授权日期：2017.10.13
[7]贾护军，张航，邢鼎，杨银堂，一种具有三凹陷结构的场效应晶体管及其制备方法，专利号：ZL201510223665.3，授权日期：2017.11.07
[8]贾护军，张航，邢鼎，一种具有双凹陷缓冲层的4H-SiC金属半导体场效应晶体管，专利号：ZL201510001340.0，授权日期：2018.01.12
[9]贾护军，罗烨辉，马培苗，杨志辉，一种具有部分下沉沟道的4H-SiC金属半导体场效应晶体管的制备方法，专利号：ZL201510532352.6，授权日期：2018.01.12
三、出版教材：
贾护军，《固体物理基础教程》，西安电子科技大学出版社，2012年11月，2014年11月入选国家十二五规划教材。
四、出版专著：
杨银堂，贾护军，段宝兴，《碳化硅半导体材料与器件》，电子工业出版社，2012年8月。