学术论文：

[1]Cui Yang, Jian-Qi Zhang, Xing Xu, et al. Quaternion phase-correlation-based clutter metric for color images. Optical Engineering. 2007. Vol. 46(12): 127008(1-7). (SCI: 000252846600032；EI: 080211008862). （当年影响因子0.757）.  

[2]Cui Yang, Jian-Qi Zhang, Xiao-Rui Wang, et al. A novel similarity based quality metric for image fusion. Information Fusion. 2008. Vol. 9(2): 156-160. (SCI: 000255628000003; EI: 081011134203).（当年影响因子2.0577）.
[3]Cui Yang, Jie Wu, Qian Li, and Jian-Qi Zhang. Sparse-representation-based clutter metric. Applied Optics. 2011. Vol. 50(11): 1601-1605. (SCI: 000289277200014; EI: 20112414066641).（当年影响因子1.748 ）.
[4]杨翠，张建奇. 基于红外特征与区域相似的图像融合算法. 西安电子科技大学学报（自然科学版）. 2006.Vol.33(6): 871-875 (EI: 070510400289).
[5]Qian Li, Cui Yang, JianQi Zhang, etc. Hidden Markov Models for Background Clutter. Optical Engineering, 2013, 52(7):073108_1-073108_8. (SCI: 000322478600011)

[6]Qian Li, Cui Yang, JianQi Zhang. Target Acquisition Performance in a Cluttered Environment. Applied Optics, 2012, 51(31): 7668-7673. (SCI: 000310640800032, EI: 20124515652915).
[7]ChuXiu-qin, Yang Cui, Li Qian. Contrast-Sensitivity-Function-Based Clutter Metric. Optical Engineering, 2012, 51(6): 067003_1-067003_6. (SCI: 000305792200045)
[8]Wei Mao, Cui Yang, Yue Hao, et. al. Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors. ACTA PHYSICA SINICA. 2011. Vol.59 (1): 017205. (SCI: 000287419100089).
[9]Wei Mao, Cui Yang, Yue Hao, et. al. Development and characteristic analysis of Field-plated Al₂O₃/AlInN/GaN MOS-HEMT. Chin. Phys. B. 2011. Vol. 20(1): 017203. (SCI: 000286676000081; EI: 20111113743881).

[10]Wei Mao, Cui Yang, Yue Hao, et. al. The effect of a HfO(2) insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT. Chin. Phys. B. 2011. Vol. 20(9): 097203. (SCI: 000295964200063; EI: 20113914374942).

[11] Fudi Zhang, Jianqi Zhang, Cui Yang, et al. Performance simulation and architecture optimization for CMOS image sensor pixels scaling down to 1.0μm. IEEE Transactions on Electron Devices. 2010. Vol. 57(4): 788-794. (SCI&EI).

已授权的国家发明专利：

[1] 彩色图像背景杂波量化方法. 专利号：ZL200710019096.6

[2] 光伏型探测器阵列及其制作方法. 专利号:201410668714.X.

[3] 红外探测器阵列及其制作方法. 专利号: ZL 201410667778.8.

[4] InSb红外焦平面探测器阵列及其制作方法. 专利号:ZL 201410667776.9.

[5] 槽栅型源场板高电子迁移率器件及其制作方法. 专利号:ZL200810232513.X.

[6] 槽栅型栅-漏复合场板高电子迁移率晶体管. 专利号:ZL200810232525.2.

[7] 绝缘栅型源-漏复合场板高电子迁移率晶体管及其制作方法. 专利号:ZL200810232528.6.

[8] 凹槽绝缘交叠栅异质结场效应晶体管. 专利号: ZL200810232537.5.

[9] 绝缘栅型源场板异质结场效应晶体管. 专利号:ZL200810232512.5.

[10] 基于稀疏表示的背景杂波量化方法. 专利号：ZL 201110001480.X

[11] 基于对比度敏感函数的背景杂波量化方法.专利号：ZL 201110205534.4.