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[2]Effects of Ohmic Area Etching on Buffer Breakdown Voltage of AlGaN/GaN HEMT，TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS，2017. Vol.18, No.3

[3] Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electronmobility transistor with oxygen-containing plasma treatment，Applied Physics Express 10, 056502 (2017)

[4] Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICP，IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 10, OCTOBER 2017

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[6] Photoresponse and traps characteristics of transparent AZO-gated AlGaNGaN HEMT,Chinese Physics B，2016，Vol.25, No.10

[7]Low ohmic-contact resistance in AlGaN_ GaN high electron mobility transistors with holes etching in ohmic region，ELECTRONICS  LETTERS，2015. Vol.51, No.25, pp:2145
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