[1] Zhen Cao*, Duan Baoxing, Haitao Song, Fengyun Xie, Yintang Yang. Novel Superjunction LDMOS with a High-K Dielectric Trench by TCAD Simulation Study[J]. IEEE Transactions on Electron Devices, 2019, 66(5):2327-2332. (SCI: 000466028500044, IF: 2.605, JCR2)

[2] Zhen Cao*, Duan Baoxing, Baoxing Duan, Tongtong Shi, Ziming Dong, Haijun Guo, Yintang Yang. Theory Analyses of SJ-LDMOS with Multiple Floating Buried Layers Based on Bulk Electric Field Modulation[J], IEEE Transactions on Electron Devices, 2018, 65(6) :2565-2571. ( SCI: 000432462200075, IF: 2.605, JCR2 )

[3] Zhen Cao*, Baoxing Duan, Tongtong Shi, Song Yuan, Yingtang Yang. A Superjunction U-MOSFET With SIPOS Pillar Breaking Superjunction Silicon Limit by TCAD Simulation Study[J], IEEE Electron Device Letters, 2017, 38 (6): 794-797. (SCI: 000402146300025, IF: 3.048, JCR2)

[4] Zhen Cao*, Baoxing Duan, Hai Cai, Song Yuan, Yintang Yang. Theoretical Analyses of Complete 3-D Reduced Surface Field LDMOS With Folded-Substrate Breaking Limit of Superjunction LDMOS[J], IEEE Transactions on Electron Devices, 2016, 63 (12): 4865-4872. (SCI: 000389342200039, IF: 2.605, JCR2)

[5] Duan Baoxing*, Cao Zhen, Song Yuan, Yintang Yang. Complete 3D-Reduced Surface Field Superjunction Lateral Double-Diffused MOSFET Breaking Silicon Limit[J]. IEEE Electron Device Letters, 2015, 36 (12): 1348-1350. (SCI: 000365295300026, IF: 3.048, JCR2)

[6] Duan Baoxing*, Cao Zhen, Xiaoning Yuan, Song Yuan, Yintang Yang. New Superjunction LDMOS Breaking Silicon Limit by Electric Field Modulation of Buffered Step Doping[J]. IEEE Electron Device Letters, 2015, 36 (1): 47-49. (SCI: 000347045200017, IF: 3.048, JCR2)

[7] Zhen Cao*, Baoxing Duan, Song Yuan, Haijun Guo, Jianmei Lv, Tongtong Shi, Yintang Yang. Novel Superjunction LDMOS with Multi-Floating Buried Layers[C]. 29th Int'l Symposium on Power Semiconductor Devices and ICs, 2017/06, LVT-P2: 283-286. (EI: 20173604110374, 国际功率半导体器件与功率集成电路领域顶级学术会议)

[8] Zhen Cao*, Duan Baoxing, Haijun Guo, Haitao Song, Ziming Dong, Tongtong Shi, Yintang Yang. Novel Power U-MOSFET with SIPOS Pillars [J]. Materials Science in Semiconductor Processing, 2018, (87): 86-91. (SCI: 000440659000013, IF: 2.359, JCR3)

[9] Zhen Cao*, Duan Baoxing, Song Yuan, Tongtong Shi, Yintang Yang. New superjuction LDMOS with surface and bulk electric field modulation by buffered step doping and multi floating buried layers [J]. Superlattices and Microstructures, 2017, (111): 221-229. (SCI: 000415768800024, IF: 2.112, JCR3)

[10] Zhen Cao*, Duan Baoxing, Tongtong Shi, Song Yuan, Yintang Yang. Application of Novel Terminal Technologies for Superjunction Power MOSFETs[J]. IETE Technical Review, 2018, 35(4): 402-412. (SCI: 000449547800008, IF: 1.339, JCR3)

[11] Zhen Cao*, Baoxing Duan, Xiaoning Yuan, Song Yuan, Yintang Yang. New Super Junction LDMOS with Step Field Oxide Layer [J]. Micro & Nano Letters，2016,11 (11): 666-669. (SCI: 000387543500002, IF: 0.853, JCR3)

[13] 曹震*，段宝兴, 袁小宁, 杨银堂. 具有半绝缘多晶硅完全三维超结横向功率器[J]. 物理学报Acta Phys. Sin, 2015, 64 (18): 187303(1-6). (SCI: 000362977200043, IF: 1.018, JCR3)

[14] 段宝兴* ,曹震 , 袁嵩，袁小宁，杨银堂. 新型缓冲层分区电场调制横向双扩散超结功率器件. 物理学报Acta Phys. Sin, 2014, 63 (24): 247301(1-6). (SCI: 000347610900037, IF: 1.018, JCR3)

[15] 段宝兴* ,曹震 , 袁小宁，杨银堂 .具有N型缓冲层REBULF Super Junction LDMOS. 物理学报Acta Phys. Sin, 2014, 63 (22): 227302(1-6). (SCI: 000346853600038, IF: 1.018, JCR3).

[16] Duan Baoxing*, Song Yuan, Cao Zhen, Yintang Yang. New Superjunction LDMOS With the Complete Charge Compensation by the Electric Field Modulation[J], IEEE Electron Device Letters, 2014, 35 (11): 1115-1117. (SCI: 000344588100015, IF: 3.048, JCR2).