先后在《IEEE ELECTRON DEVICE LETTERS》、《IEEE TRANSACTIONS ON ELECTRON DEVICES》、《Solid-State Electronics》、《Science in China Series F: Information Sciences》、《Chinese Physics》、《Chinese Physics Letters》、《中国科学》、《半导体学报》等国际国内重要期刊上发表论文40余篇，其中30篇次被SCI、EI检索。

 2012年：

(1) DUAN BaoXing & YANG YinTang. Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs, Sci China Inf Sci, VOL. 55(2), 2012: 473-479. SCI:000299517500022  SCIENCE CHINA-INFORMATION SCIENCES 

(2) Baoxing Duan, Yintang Yang. New Al0.25Ga0.75N/GaN HEMTs structure with the partial silicon doping, Micro &Nano Letter, vol. 7(1), 2012, pp. 9-11. SCI:000300299500003; EI:20120814802093

(3) Baoxing Duan and Yintang Yang. A Development Summarization of the Power Semiconductor DevicesΠ, IETE Technical Review, vol. 29(1), JAN-FEB 2012, pp.36-43. SCI:000301060600003; EI:20121214868209

(4) Duan Bao-Xing（段宝兴）, Yang Yin-Tang（杨银堂）. Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with the partial silicon doping in AlGaN la[ant]yer, Chinese Physics B, 2012, 21(5), PP.057201(1-8). SCI:000303999000084; EI:20122015021430

(5) Baoxing Duan and Yintang Yang. The application of the electric field modulation and charge shielding effects to the High Voltage Si LDMOS, IETE Technical Review, vol. 29(4), Jul-Aug 2012, pp. 276-281.

(6) 段宝兴 杨银堂 陈敬. F离子注入新型Al0.25Ga0.75N/GaN HEMT器件耐压分析. 物理学报 Acta Phys. Sin. Vol. 61, No. 22(2012) 227302(1-7).

(7) 段宝兴 杨银堂 陈敬. 新型Si3N4层部分固定正电荷AlGaN/GaNHEMTs器件耐压分析. 物理学报 Acta Phys. Sin. Vol. 62, No. 24(2012) 247302(1-6).

(8) 段宝兴，杨银堂. 新型RESURF AlGaN/GaN HEMTs器件耐压分析. 中国科学：信息科学，2012，42：770-777

(9) Zhang Xian-jun, Yang Yin-tang, Duan Bao-Xing, Chen Bin, Chai Chang-chun and Song Kun. New 4H Silicon Carbide me[ant]tal Semiconductor Field Effect Transistor with the Buffer la[ant]yer between the Gate and Channel. Chinese Physics B, 2012, 21(1): 017201-1~7 (SCI:000300258200064，EI:20120514738302)

(10) Zhang Xian-Jun, Yang Yin-Tang, Duan Bao-Xing, Chai Chang-Chun, Song Kun and Chen Bin. Modeling of the drain induced barrier lowering effect and optimization for dual-channel 4H silicon carbide me[ant]tal semiconductor field effect transistor. Chinese Physics B, 2012, 21(3): 037303-1~5 (SCI: 000301341400068; EI:20121214877879)

2011年：

(1) Baoxing Duan and Yintang Yang. Low Specific On-Resistance Power MOS Transistor with Multi-la[ant]yer Carrier Accumulation breaks the limit line of silicon. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 58(7), 2011: 2057-2060. SCI:000291952900031; EI:20112614093036

(2) DUAN BaoXing & YANG YinTang. Strain coefficient measurement for the (100) uniaxial strain silicon by Raman spectroscopy, Sci China Inf Sci, VOL. 54(8), 2011: 1762-1768. SCI:000293188100020;

(3) Baoxing Duan, Yintang Yang. Power VDMOS Transistor with the Step Oxide Trench Breaks the Limit Line of Silicon, Micro &Nano Letter, vol. 6(9), 2011, pp. 777-780. SCI:000295320400010; EI:12288398

(4) Baoxing Duan, Yintang Yang. REBULF Super Junction MOSFET with N+ buried la[ant]yer, Micro &Nano Letter, vol. 6(11), 2011, pp. 881-883. SCI:000298136300002

(5) Baoxing Duan and Yintang Yang. A Development Summarization of the Power Semiconductor Devices, IETE Technical Review, vol. 28(6), NOV-DEC 2011, pp.503-510. SCI:000298626700006

2010年：

(1) Baoxing Duan, Yintang Yang, Bo Zhang. High Voltage REBULF LDMOS with N+-Buried la[ant]yer《Solid-State Electronics》,VOL.54; p: 685-688, 2010.
(2) 段宝兴, 杨银堂. 利用Raman光谱测定硅(100)晶面单轴应变的应变系数.《中国科学: 信息科学》. 2010. 40: 1033-1038.
(3) 段宝兴, 杨银堂. CMOS双层可变功函数金属栅技术.《功能材料与器件学报》. 2010. 16 (2): 158-162.
(4) 段宝兴, 杨银堂. 应变硅的应变量表征技术.《功能材料与器件学报》. 2010. 16 (4): 323-328.
(5) 杨银堂 耿振海 段宝兴 贾护军 余涔 任丽丽. 具有部分超结的新型SiC SBD特性分析. 《物理学报》. 2010, 59(1): 566-570.

2009年：

(1) Baoxing Duan, Yintang Yang, Bo Zhang and Xufeng Hong. Folded Accumulation LDMOST (FALDMOST): New Power MOS Transistor with Very Low Specific On-resistance.《IEEE ELECTRON DEVICE LETTERS》, VOL.30 NO.12; p: 1329-1331, 2009. SCI: 000272044500027; EI: 20094912524366
(2) Baoxing Duan, Yintang Yang and Bo Zhang. New Super Junction LDMOS with N-Type Charges Compensation la[ant]yer.《IEEE ELECTRON DEVICE LETTERS》, VOL.30 NO.3; p: 305-307, 2009. SCI: 000263920400032; EI: 20091311980826
(3) 段宝兴, 杨银堂. 利用Keating Model计算Si(1-x)Gex及非晶硅的拉曼频移.《物理学报》.Vol. 58(10) p: 7114-7118, 2009.SCI: 000270876900073

2008年：

(1) Baoxing Duan, Yang Yintang, Zhang Bo and Li Zhaoji, An Ultra-low Specific On-Resistance VDMOS with a Step Oxide-Bypassed Trench Structure,《Chinese Journal of Semiconductors》, 2008,29(04): 677-681. EI: 20082111273098
(2) Cheng Jian-Bing, Zhang Bo, Duan Bao-Xing and Li Zhao-Ji. A Novel Super-Junction Lateral Double-Diffused me[ant]tal-Oxide-Semiconductor Field Effect Transistor with n-Type Step Doping Buffer la[ant]yer.《Chinese Physics Letters 》2008, 25 : 262-265. SCI: 000252613500071

2007年：

(1) DUAN Bao-Xing(段宝兴), ZHANG Bo(张波), LI Zhao-Ji(李肇基). New CMOS Compatible Super Junction LDMOST with N-Type Buried la[ant]yer, 《Chinese Physics》,Vol. 16 pp: 3754-3759, 2007. SCI: 000251993200033; EI: 20080111007031
(2) DUAN Bao-Xing(段宝兴), ZHANG Bo(张波), LI Zhao-Ji(李肇基) . New Power Lateral Double Diffused me[ant]tal-Oxide- Semiconductor Transistor with a Folded Accumulation la[ant]yer.《Chinese Physics Letters 》2006, 24 (5): 1342-1345. SCI: 000246659400060
(3) Baoxing Duan, Bo Zhang and Zhaoji Li. New Lateral Super Junction MOSFET’s with N+-Floating la[ant]yer on a High-resistance Substrate.《Chinese Journal of Semiconductors》, 2007,28(02):166-170. EI: 20071510544658
(4) 段宝兴,黄勇光,张波,李肇基. REBULF LDMOS实验结果及具有部分N+浮空层结构的分析.《半导体学报》. 2007,28(08):85-89. EI: 20073710810194
(5) 段宝兴, 张波, 李肇基. 高压SOI LDMOS设计的新技术－电场调制及电荷对局域场的屏蔽效应在高压SOI LDMOS设计中的应用. 《微电子学》, 2007(4): 459-465.

2006年：

(1) Baoxing Duan ,Bo Zhang ,Zhaoji Li. New Thin-Film Power MOSFET’S with a Buried Oxide Double Step Structure.《IEEE ELECTRON DEVICE LETTERS》, VOL. 27. NO.5; p: 377-379, 2006。SCI: 000237602300022；EI: 2006199865621
(2) 段宝兴,张波,李肇基. 双面阶梯埋氧型SOI结构的耐压分析.《半导体学报》, 2006,27(05):886-891. EI: 20063310068440
(3) 段宝兴,张波,李肇基. 一种新的低导通电阻折叠硅SOI LDMOS, 《半导体学报》. 2006,27(10): 1814-1817. EI: 20064910289685
(4) 段宝兴, 张波, 李肇基. 功率半导体器件发展概述.《电力电子与应用》. 2006, No.1: 11-18.
(5) 张波, 段宝兴,李肇基. 具有N＋浮空层的体电场降低LDMOS结构耐压分析,《半导体学报》. 2006, 27(04):730-734. EI: 2006259949138
 

2005年：

(1) Baoxing Duan, Bo Zhang and Zhaoji Li. A New Partial SOI Power Device Structure with P-type Buried la[ant]yer, 《Solid-State Electronics》, Vol 49/12 pp 1965-1968. 2005. SCI: 000234233800016；EI: 2005499521772
(2) 段宝兴, 张波, 李肇基. 阶梯埋氧型SOI结构的耐压分析.《半导体学报》, 2005,26(7):1396-1400. EI: 2005329290478
(3) 段宝兴, 张波, 李肇基. 埋空隙PSOI结构的耐压分析.《半导体学报》, 2005,26(9):1818-1822. EI: 2006029637021
(4) 段宝兴,张波,李肇基. 具有P型埋层PSOI结构的耐压分析.《半导体学报》, 2005,26(11):2149-2153. EI: 2006119760614

2004年：

(1) 段宝兴, 谢华, 王暄. 热处理对无机纳米聚酰亚胺复合物热激电流谱的影响.《哈尔滨理工大学学报》,2004, 06:124-125.

 

国际国内会议：

(1) Baoxing Duan, Bo Zhang and Zhaoji Li. A New Reduced Bulk Field (REBULF) High-Voltage LDMOS with N⁺-Floating la[ant]yer. IEEE Proceeding of ICCCAS06, 2006, pp. 2709-2712. EI: 20081011132218；ISIP: 000241262903124

(2) Baoxing Duan, Bo Zhang and Zhaoji Li. A New Super Junction LDMOS with N⁺-Floating la[ant]yer. IEEE Proceeding of IPEMC’06, 2006, pp. 70-73. EI: 20082511328113

(3) Baoxing Duan, Bo Zhang and Zhaoji Li. New Concept for Improving Characteristics of High-Voltage Power Devices by Buried la[ant]yers Modulation Effect. IEEE Proceeding of ICSICT’06, 2006, pp. 239-241. EI: 20073110725193

(4) 段宝兴,张波,李肇基. 一种埋层阶梯型SOI结构的耐压分析. 第六届全国SOI技术研讨会.

(5)段宝兴,张波,李肇基. 功率半导体器件发展概述. 2006中国电工技术学会电力电子学会第十届学术年会.

(6) 黄勇光, 段宝兴, 罗萍. 超薄硅层REBULF LDMOS的工艺仿真和设计. 四川省电子学会半导体与集成技术专委会2006年度学术年会论文集. 2006, 10-13.