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[1]  M. Yang, P. Hu, J. Q. Lu, Q. B. Lv, and S. W. Li, "Coupled interfaces for misreading avoidance and write current reduction in passive crossbar memory," Applied Physics Letters, vol. 98, p. 213501, 2011.

[2]  M. Yang, D. H. Bao, and S. W. Li, "Coexistence of nonvolatility and volatility in Pt/Nb-doped SrTiO3/In memristive devices," Journal of Physics D: Applied Physics, vol. 46, p. 495111, 2013.

[3]  M. Yang, N. Qin, L. Z. Ren, Y. J. Wang, K. G. Yang, F. M. Yu, W. Q. Zhou, M. Meng, S. X. Wu, D. H. Bao, and S. W. Li, "Realizing a family of transition-me[ant]tal-oxide memristors based on volatile resistive switching at a rectifying me[ant]tal/oxide interface," Journal of Physics D: Applied Physics, vol. 47, p. 045108, 2014.

[4]  M. Yang, L. Z. Ren, and S. W. Li, "Direct evidences of filamentary resistive switching in Pt/Nb-doped SrTiO3 junctions," Journal of Applied Physics, vol. 115, p. 134505, 2013.

[5]  L. Z. Ren, M. Yang, W. Q. Zhou, S. X. Wu, and S. W. Li, "Influence of Stress and Defect on Magnetic Properties of Mn3O4 Films Grown on MgAl2O4 (001) by Molecular Beam Epitaxy," The Journal of Physical Chemistry C, vol. 118, pp. 243, 2014.

[6]  L. M. Xu, M. Yang, X. Y. Li, P. Hu, and S. W. Li, "Effect of growth temperature on ferromagnetism in Mn: TiO2 thin film grown on SrTiO3: Nb substrate," sc[ant]ripta Materialia, vol. 63, pp. 113, 2010.

[7]  J. Q. Lu, M. Yang, P. Hu, Q. B. Lv, and S. W. Li, "Interface States Induced Temporary Resistance Changing Behavior in Pt/TiO2/SrTi0.993Nb0.007O3/Pt Structure," Journal of the Electrochemical Society, vol. 158, pp. H704, 2011.

[8]  L. Z. Ren, S. X. Wu, M. Yang, W. Q. Zhou, and S. W. Li, "Magnetic properties of Mn3O4 film under compressive stress grown on MgAl2O4 (001) by molecular beam epitaxy," Journal of Applied Physics, vol. 114, p. 053907, 2013.

[9]  F. M. Yu, Y. J. Liu, M. Yang, S. X. Wu, W. Q. Zhou, and S. W. Li, "Accompanying growth and room-temperature ferromagnetism of η-Mn3N2 thin films by molecular beam epitaxy," Thin Solid Films, vol. 531, pp. 228, 2013.

[10] L. M. Xu, X. J. Xing, M. Yang, X. Y. Li, S. X. Wu, P. Hu, J. Q. Lu, and S. W. Li, "Laser reactivation of Room-T c ferromagnetism in Mn-doped insulating TiO2 thin films," Applied Physics A: Materials Science & Processing, vol. 98, pp. 417, 2010.

[11] Q. B. Lv, S. X. Wu, J. Q. Lu, M. Yang, P. Hu, and S. W. Li, "Conducting nanofilaments formed by oxygen vacancy migration in Ti/TiO2/TiN/MgO memristive device," Journal of Applied Physics, vol. 110, p. 104511, 2011.

[12] P. Hu, X. Y. Li, J. Q. Lu, M. Yang, Q. B. Lv, and S. W. Li, "Oxygen deficiency effect on resistive switching characteristics of copper oxide thin films," Physics Letters A, vol. 375, pp. 1898, 2011.

[13] F. M. Yu, L. Z. Ren, M. Meng, Y. J. Wang, M. Yang, S. X. Wu, and S. W. Li, "Growth and magnetic property of antiperovskite manganese nitride films doped with Cu by molecular beam epitaxy " Journal of Applied Physics vol. 115, p. 133911, 2014.

[14] X. Y. Li, S. X. Wu, P. Hu, X. J. Xing, Y. J. Liu, Y. Yu, M. Yang, J. Q. Lu, S. W. Li, and W. Liu, "Structures and magnetic properties of p-type Mn: TiO2 dilute magnetic semiconductor thin films," Journal of Applied Physics, vol. 106, p. 043913, 2009.