2017年至今：

1. T. T. Wang, X. Wang*, Y. He, M. Jia, Q. Ye, Y. Xu, Y. H. Zhang, Y. Li, L. H. Bai, X. H. Ma, Y. Hao, J. P. Ao, “Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes,” IEEE Transactions on Electron Devices, vol. 68, pp. 2867-2871, 2021.
2. Y. He, X. Wang*, J. Y. Zhou, T. T. Wang, M. K. Ren, G. Q. Chen, T. F. Pu, X. B. Li, M. Jia, Y. Y. Bu, J. P. Ao, “Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment,” IEEE Transactions on Electron Devices, vol. 68, pp. 1250-1254, 2021.
3. X. Wang*, Q.Ye, L. H. Bai, X. Su, T. T. Wang, T. W. Peng, X. Q. Zhai, Y. Huo, H. Wu, C. Liu, X. H. Ma, Y. Hao and J. P. Ao, “Enhanced UV Emission from ZnO on Silver Nanoparticle Arrays by the Surface Plasmon Resonance Effect,” Nanoscale Research Letters, vol. 16, p. 8, 2021.
4. T. F. Pu, Y. Chen, X. B. Li, T. P. Peng, X. Wang, J. Li, W. He, J. W. Ben, Y. M. Lu, X. K. Liu, and J. P. Ao, “Gate structure dependent normally-off AlGaN/GaN heterostructure field-effect transistors with p-GaN cap layer”, Journal of Physics D-Applied Physics, vol. 53, p. 415104,2020.
5. Y. Wang, L. A. Li, C. Li, J. P. Ao, X. Wang, and Y. Hao, “Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation,” IEEE Journal of the Electron Devices Society, vol. 8, pp. 134-139, 2020.
6. Z. W. Chen, Y. Y. Bu, L. Wang, X. Wang, and J. P. Ao, “Single-sites Rh-phosphide modified carbon nitride photocatalyst for boosting hydrogen evolution under visible light,” Applied Catalysis B: Environmental, vol. 274, p. 119117, 2020.
7. T. T. Wang, X. Wang*, X. B. Li, J. C. Zhang and J. P. Ao, “Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes,” Chinese Physics Letters, vol. 36, p. 057101, 2019.
8. T. Peng, X. Wang*, and J. Ao, “Progress in Key Technologies for GaN-based Power Electronic Devices,” Jounal of Power Supply, vol. 17, pp. 4-15, 2019.
9. M. J. Zheng, P. B. Gui, X. Wang, G. Z. Zhang, J. X. Wan, H. Zhang, G. J. Fang, H. Wu, Q. Q. Lin, and C. Liu, "ZnO ultraviolet photodetectors with an extremely high detectivity and short response time," Applied Surface Science, vol. 481, p. 437, 2019.
10. Y. Zhang, Y. Li, D. Ni, Z. Chen, X. Wang, Y. Bu, and J. P. Ao, “Improvement of BiVO4 Photoanode Performance During Water Photo-Oxidation Using Rh-Doped SrTiO3 Perovskite as a Co-Catalyst,” Advanced Functional Materials, p. 1902101, 2019.
11. L. Bai, J. Wen, Y. Tang, H. Wu, H. Zhang, X. Wang, W. He, and R. Sun. “Synergic effect of graphene and core-shells structured Au NR@ SiO2@ TiO2 in dye-sensitized solar cells,” Nanotechnology, vol 30, p. 465401, 2019.
12. M. Zheng, Y. Xu, X. Wang, G. Zhang, W. Li, J. Li, L. Zhang, H. Wu, Q. Lin, and C. Liu. “ZnO-Based Ultraviolet Photodetectors with Tunable Spectral Responses,” Physica status solidi (RRL)-Rapid Research Letters, vol. 13, p. 1900441, 2019.
13. X. Wang, L. Bai, H. Zhang, X. Su, H. Wu and C. Liu, “Ag nanoparticle surface-plasmon-resonance-enhanced electroluminescence from semipolar n-ZnO/p-GaN heterojunction light-emitting diodes,” Applied Physics Express, vol. 11, p. 102101, 2018.
14. T. Pu, X. Wang, Q. Huang, T. Zhang, X. Li, L. Li and J. P. Ao, "Normally-off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process," IEEE Electron Device Letters, vol. 40, pp. 185-188, 2018.
15. Y. Zhang, G. Han, H. Wu, X. Wang, Y. Liu, J. Zhang, H. Liu, H. Zheng, X. Chen, C. Liu and Y. Hao, “Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment,” Nanoscale Research Letters, vol. 13, p. 237, 2018.
16. T. Zhang, T. Pu, T. Xie, L. Li, Y. Bu, X. Wang, and J. P. Ao, "Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors," Chinese Physics B, vol. 27, p. 78503, 2018.

    2017年前：

1. X. Wang, X. Gan, G. Zhang, X. Su, M. Zheng, Z. Ai, H. Wu, and C. Liu, "The function of an In_0.17Al_0.83N interlayer in n-ZnO/In_0.17Al_0.83N/p-GaN heterojunctions," Applied Surface Science, vol. 393, pp. 221-224, 2017.
2. X. Wang, G. Zhang, Y. Xu, H. Wu, and C. Liu, "Selective-Area Growth of Transferable InN Nanocolumns by Using Anodic Aluminum Oxide Nanotemplates," Nanoscale Research Letters, vol. 12, p. 145, 2017.
3. X. Wang, W. Wang, J. Wang, H. Wu, and C. Liu, "Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by Mg_Ga δ doping in (AlN)_m/(GaN)_n superlattice," Scientific Reports, vol. 7, p. 44223, 2017.
4. M. Zheng, G. Zhang, X. Wang, J. Wan, H. Wu, and C. Liu, "Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers.," Nanoscale Research Letters, vol. 12, p. 267, 2017.
5. X. Su, G. Zhang, X. Wang, C. Chen, H. Wu, and C. Liu, "Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts," Nanoscale research letters, vol. 12, p. 469, 2017.
6. G. Zhang, H. Wu, X. Wang, D. Zhang, T. Wang, and C. Liu, "Modulation of the dissipation factor in transparent AlZnO/ZrO2/AlZnO capacitors," Journal of Alloys and Compounds, vol. 690, pp. 777-782, 2017.
7. X. Wang, G. Z. Zhang, Y. Xu, X. W. Gan, C. Chen, Z. Wang, Y. Wang, J. L. Wang, T. Wang, H. Wu, and C. Liu, "Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al₂O₃ as Dielectric Layers," Nanoscale Research Letters, vol. 11, p.21, 2016.
8. G. Zhang, H. Wu, X. Wang, T. Wang, and C. Liu, "Transparent capacitors with hybrid ZnO: Al and Ag nanowires as electrodes," Nanotechnology, vol. 27, p. 105204, 2016.