一、期刊论文

[1] Ling Lv, Xiaoyao Yan, Yanrong Cao, Qing Zhu, Ling Yang, Xiaowei Zhou, Xiaohua Ma,Yue Hao, Significant Degradation of AlGaN/GaN High-Electron Mobility Transistors with Fast and Thermal Neutron Irradiation, IEEE Transactions on Nuclear Science，2019, Vol.66, No.6, pp:886.

[2] Ling Lv, Peixian Li, XiaoHua Ma, LinYue Liu, Ling Yang, Xiaowei Zhou, Jincheng Zhang, Yanrong Cao, Zhen Bi, Teng Jiang, Qing Zhu, Yue Hao, Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes,IEEE Transactions on Nuclear Science, 2017, Vol.64, No.1, pp:643.

[3] Ling Lv, Xiaohua Ma, Jincheng Zhang, Zhen Bi, Linyue Liu, Hengsheng Shan, and Yue Hao, Proton Irradiation Effects on AlGaN/ AlN/GaN heterojunctions, IEEE Transactions on Nuclear Science, 2015, Vol.62, No.1, pp:300.

[4] Ling Lv, Xiaohua Ma, He Xi, Linyue Liu, Yanrong Cao, Jincheng Zhang, Hengsheng Shan, and Yue Hao,Theoretical analysis of proton irradiation effects on AlGaN/GaN high-electron-mobility ransistors,Journal of Vacuum Science & Technology B, 2015, Vol.33, pp:051212.

[5] Ling Lv, J. G. Ma, Y. R. Cao, J. C. Zhang, W. Zhang, L. Li, S. R. Xu, X. H. Ma, X. T. Ren, and Y. Hao, Study of proton irradiation effects on AlGaN/GaN high electron mobility transistors. Microelectronics Reliability, 2011, Vol.51, No.12, pp:2168.

[6] Lu Ling, Zhang Jin-Cheng, Xue Jun-Shuai, Ma Xiao-Hua, Zhang Wei, Bi Zhi-Wei, Zhang Yue, and Hao Yue, Neutron irradiation effects on AlGaN/GaN high electron mobility transistors, Chinese Physics B, 2012, Vol.21, No.3, pp: 037104.

[7] Lu Ling, Zhang Jin-Cheng, Ma Xiao-Hua, Cao Yan-Rong, and Hao Yue, Effects of 3MeV proton irradiation on AlGaN/GaN high electron mobility transistors, Acta Physica Sinica, 2012, Vol.61, No.5, pp: 057202.

[8] Lu Ling, Hao Yue, Zhang JinCheng, Xu ShengRui, Ai Shan, and Meng FanNa, Proton irradiation effects on HVPE GaN, Science in China, Ser E, 2012, Vol. 55, No. 9, pp: 2432.

[9] 吕玲， 林志宇， 张进成，马晓华，郝跃，GaN基高电子迁移率晶体管的质子辐照效应研究，空间电子技术，2013， Vol.3, pp:33.

[10] Lu Ling, Gong Xin, and Hao Yue, Properties of p-type GaN etched by inductively coupled plasma and their improvement. Acta Physica Sinica, 2008, Vol. 57, No. 2, pp: 1128.

[11] Hengsheng Shan, Ling Lv, Xiaoya Li, Shufang Ma, Bingshe Xu, Jincheng Zhang, Shengrui Xu, Chuangyang Liu, Xingrong Ren, and LinjuanGuo, Proton radiation effect on InGaN/GaN multiple quantum wells solar cell, ESC Journal of Solid State Science and Technology, 2018, 7(12), P740-744.

[12] Ling Yang, Xiao-Wei Zhou, Xiao-Hua Ma, Ling Lv, Yan-Rong Cao, Jin-Cheng Zhang, and Yue Hao, Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor, Chinese Physics B, 2017, 26(1),017304-5.

[13] Gong Xin, Lu Ling, Hao Yue, Li Peixian, Zhou Xiaowei, and Chen Haifeng, Study on ICP ectching induced damage in p-GaN, Chinese Journal of Semiconductors, 2007, Vol. 28, No.7, pp: 1097.

[14] Zhen Bi, Jincheng Zhang, Ling Lv, and Yue Hao, The effect of 3-MeV proton irradiation on the performance of InGaN/GaN MQWs solar cells, IEEE Photonics Technology Letters, 2014, vol. 26, no. 15, pp: 1492. 
[15] Zhen Bi, Jincheng Zhang, Qiye Zheng, Ling Lv, Zhiyu Lin, Hengsheng Shan, Peixian Li, Xiaohua Ma, Yiping Han and Yue Hao, An InGaN-based solar cell including dual InGaN/GaN multiple quantum wells, IEEE Photonics Technology Letters, 2016, 28(20), 2117.

[16] Bi Zhiwei, Feng Qian, Zhang Jincheng, Lu Ling, Mao Wei, Gu Wenping, Ma XiaoHua, and Hao Yue, The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT,  Science China- Physics, Mechanics & Astronomy, 2012, 55(1), 40-43.

[17] Lin Zhi-Yu, Zhang Jin-Cheng, Xu ShengRui, Lv Ling, Liu Zi-Yang, Ma Jun-Cai, Xue Xiao-Yong, Xue Jun-Shuai, and Hao Yue, TEM study of GaN films on vicinal sapphire(0001) substrates by MOCVD, Acta Physca Sinica, 2012, 61(18), 186103.

[18] Zhang Wei, Zhang Yue, Xue JunShuai, Zhang Ying, Lv Ling, Zhang JinCheng and Hao Yue, Interaction between Si-doping and polarization induced internal electric field in AlGaN/GaN superlattice, Applied Physics Letters, 2011, Vol.99, No.16, pp:162105-3.

[19] Zhou Xiao-Wei, Xu Sheng-Rui, Zhang Jin-Cheng, Dang Ji -Yuan, Lu Ling, Hao Yue, Guo Li-Xin, Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization, Chinese Physics B, 2012, Vol.21, No.6, pp:067803-5.

[20] Li Liang, Yang Lin-An, Zhang Jin-Cheng, Xue Jun-Shuai, Xu Sheng-Rui, Lv Ling, Hao Yue and Niu Mu-Tong, Threading dislocation reduction in transit region of GaN terahertz gunn diodes, Applied Physics Letters, 2012, Vol.100, No.7, pp: 072104-4.

[21] Bi ZhiWei, Hao Yue, Feng Qian, Jiang TingTing, Cao YanRong, Zhang JinCheng, Mao Wei, Lü Ling and Zhang Yue, The passiavation mechanism of nitrogen ions on the leakage current of HfO2/AlGaN/GaN MOS-HEMTs, Science China – Physics, Mechanics & Astronomy, 2011, Vol.54, No.12, pp:2170.

[22] Xu Sheng-Rui, Hao Yue, Zhang Jin-Cheng, Xue Xiao-Yong, Li Pei-Xian, Li Jian-Ting, Lin Zhi-Yu, Liu Zi-Yang, Ma Jun-Cai, He Qiang and Lü Ling, Stress and morphology of a nonpolar a-plane GaN la[ant]yer on r-plane sapphire substrate, Chinese Physics B, 2011, Vol.20, No.10, pp:107802-5.

二、会议论文  

[1] Zhengzhao Lin, Xiaoyao Yan, Ling Lv*, Yanrong Cao, and Xiaohua Ma, 60Co gamma radiation effects on AlGaN/GaN high electron mobility transistors, 3rd International Conference on Radiation Effects of Electronic Devices, China, Chongqing, 2019. 5.29-31.

[2] Ling Lv, Xiaoyao Yan, Yanrong Cao, Xiaohua Ma, and Yue Hao, Significant Degradation of AlGaN/GaN High Electron Mobility Transistors with Thermal Neutron Irradiation, RADECS Workshop 2018 and the 2nd Intenational Conference on Radiation Effects of Electronic Devices, 中国，北京，2018.5.16-18.

[3] Ling Lv, He Xi, Yanrong Cao, Xiaohua Ma and Yue Hao, Neutron Radiation Effects on AlGaN/GaN High Electron Mobility Transistors，2017 International Workshop On Reliability of Micro- and Nano-Electronic Devices in Harsh Environment (IWRMN-EDHE ), Chengdu, 5.22-24.