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学术论文

在国际主流期刊发表SCI论文300余篇,SCI他引2000余次,出版专著3部。

近年来代表性学术论文与论著:

(1) Zhang Weihang ; Zhang Jincheng*; Xiao Ming; Zhang Li; Hao Yue,Al0.3Ga0.7N/GaN (10nm)/Al0.1Ga0.9N HEMTs With Low Leakage Current and High Three-Terminal Breakdown Voltage , IEEE Electron Device Letters, 2018.09, 39(9): 1370~1372
(2) Xiao Ming ; Zhang Jincheng*; Duan Xiaoling; Zhang Weihang; Shan Hengsheng; Ning Jing; Hao Yue, High Performance Al0.10Ga0.90N Channel HEMTs , IEEE Electron Device Letters, 2018.08, 39(8): 1149~1151
(3) Xiaoling Duan ; Jincheng Zhang*; Shulong Wang; Yao Li; Shengrui Xu;Yue Hao, A High-Performance Gate Engineered InGaN Dopingless Tunnel FET , IEEE Transactions on Electron Devices, 2018.03, 65(3): 1223~1229
(4) Xiao Ming ; Duan Xiaoling;Zhang Jincheng*; Hao Yue, Enhancement-Mode AlN/GaN HEMTs With High I-on/I-off and Low-Leakage-Current Fabricated With Low-Power Surface Oxidation Treatment , IEEE Electron Device Letters, 2018.05,39(5): 719~722
(5) Zhang, WeiHang ; Xue, JunShuai; Zhang, Li; Zhang, Tao; Lin, ZhiYu; Zhang, JinCheng*; Hao, Yue,Trap state analysis in AlGaN/GaN/AlGaN double heterostructure high electron mobility transistors at high temperatures , APPLIED PHYSICS LETTERS, 2017.6.19, 110(25): 0~252102
(6) Hao Yue; Zhang Jinfeng; Zhang Jincheng, Nitride Wide Bandgap Semiconductor Material and Electronic Devices, CRC Press, 2016.8.31,(学术专著)
(7) Zhang Yachao; Zhang Tao; Zhou Hong; Li Yao; Xu Shengrui; Bao Weimin; Zhang Jincheng* ; Ha Yue,InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance , Applied Physics Express,2018.09, 11(9): 0~094101
(8) Xiao, Ming ;Zhang, Jincheng*; Duan, Xiaoling; Shan, Hengsheng; Yu,Ting; Ning, Jing; Hao, Yue, A partly-contacted epitaxial lateral overgrowth method applied to GaN material , Scientific Reports, 2016.4.1,6
(9) Zhu, Jiaduo ; Zhang, Jincheng*; Hao, Yue, Tunable schottky barrier in blue phosphorus-graphene heterojunction with normal strain , Japanese Journal of Applied Physics, 2016.8, 55(8)
(10) Zhu Jiaduo ; Zhang Jincheng*; Xu Shengrui; Hao Yue, Unintentional doping effects in black phosphorus by native vacancies in h-BN supporting layer, Applied Surface Science, 2017, 402: 175~181