In recent years, professor Lu has published more than 50 papers in the international conference and journals and many papers have been cited and indexed by EI, SCI and ISTP. Some of the papers are listed below:

[1] Hongliang Lv,Yimen Zhang,Yuming Zhang, Lin-an Yang, “Analytic model of I-V Characteristics of 4H-SiC MESFETs based on multiparameter mobility model”, IEEE Transactions on Electron Devices, Vol.51, No.7, 2004. pp.1065-1068

[2] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Physical based model for trapping and self-heating effects in 4H-SiC MESFETs”, Applied Physics A: Materials Science and Processing, Vol. 91, n 2, May, 2008, pp. 287～290.

[3] Hongliang Lv, Yimen Zhang, Yuming Zhang, “A comprehensive model of frequency dispersion in 4H-SiC MESFET”,  Solid-State Electronics, 2009, Vol. 53, No.3, pp285-291

[4] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs”, Chinese Physics，2008, Vol. 17, No.4, pp1410-1414.

[5] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Drain avalanche breakdown and gate instabilities in 4H-SiC MESFET’s”, Diamond and related materials, Vol. 13, No.9, pp. 1587-1591. 2004

[6] Hongliang Lv, Yimen Zhang, Yuming Zhang,“The influence of interface states on the current gain of 4H-SiC bipolar transistors”，Conf. on Electron Devices and Solid-State Circuits，2009

[7] Hongliang Lv, Yimen Zhang, Yuming Zhang, “A simple method of surface parameter extraction for gate Schottky contact in 4H-SiC MESFETs”, Chinese Journal of Semiconductors, Vol.29, No.3, 2008, PP. 458～460.

[8] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs”, Chinese Physics，2008, Vol. 17, No.4, pp1410-1414. (SCI：000255096900043，EI：081811226789)

[9] Jianhua Huang, Hongliang Lu, Yimen Zhang, Yuming Zhang, “Simulation study of a mixed terminal structure for  4H-SiC merged PiN/Schottky diode”, Chinese Physics , 20(11), pp 118401-1~118401-4.

[10] Yang Shi, Lu Hong-Liang, Zhang Yu-Ming, Zhang Yi-Men, Zhang Jin-Can, and Zhang Hai-Peng, “The Effects of Gamma Irradiation on GaAs HBT”,  2011 IEEE international Conference on Electron Devices and Solid-State Circuits.

[11] Zhang Jin-Can, Zhang Yu-Ming, Lu Hong-Liang, Zhang Yi-Men, Yang Shi, and Yuan Peng, ” A simplified VBIC model and SDD implementation for InP DHBT”, 2011 IEEE international Conference on Electron Devices and Solid-State Circuits.

[12] Gu Yang, Zhang Yu-Ming, Lu Hongliang, Zhang Yi-Men, “Analysis and Simulation of Inverter Employing SiC Schottky Diode”, 2011 IEEE international Conference on Electron Devices and Solid-State Circuits.

[13] Hongliang Lu, Yimen Zhang, Yuming Zhang, “The influence of interface states on the current gain of 4H-SiC bipolar transistors”, 2009 IEEE international Conference on Electron Devices and Solid-State Circuits.

[14] LV Hong-liang, ZHANG Yi-men, ZHANG Yu-ming, “Simulation Study for High Temperature Characteristics of SiC MESFETs”, Journal of Xidian University, Vol.28, No.6, 2001, pp776-780

[15] YANG linan, ZHANG yimen, LV hongliang, “Analytical Model of Large-signal DC I-V Characteristics for 4H-SiC RF Power MESFET’s”, Chinese Journal of semiconductors, Vol22, No.9, 2001, pp1160-1168

[16] Xinjun Niu, Yuming Zhang, Yimen Zhang, Honglinag Lv, “Two-dimensional Simulation of SiC Merged PiN/Schottky Diodes (MPS)”, Chinese Journal of Semiconductors, 2002，Vol.23,No.5,pp517-522

[17] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Numerical Modeling of Anisotropy in 4H-SiC MESFET’s”, 4th Conference on Computational Physic, 2002, Xi’an, China.

[18] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Drain avalanche breakdown and gate instabilities in 4H-SiC MESFET's”,  MAR 30-APR 04, 2003, 41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 574-575, DALLAS, TEXAS.

[19]  Hongliang Lv, Yimen Zhang, Yuming Zhang, “Numerical Modeling of Anisotropy in 4H-SiC MESFET’s”, Chinese Physics, 2003, Vol. 12, No.8, pp895-898

[19] GUO Hong-xia, CHEN Yu-sheng, ZHOU Hui, ZHANG Yi-men GONG Ren-xi, LU Hong-liang, “Brief Introduction of MEDICI Software and Its Application in Ionization Radiation Effects”, Chinese Journal of Computational Physics, 2003，Vol. 20, No.4, pp372-376.

[20] Hongliang Lv, Yimen Zhang, Yuming Zhang, “The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junction diode”, Acta Physica Sinica, 2003, Vol.52, No.10, pp2541-2546

[21] Hongliang Lv, Yimen Zhang, Yuming Zhang, “A New Analytical model of the Breakdown Characterizes For 4H-SiC Devices”, Journal of Xidian University, 2003, Vol.30, No.6, pp.771-774

[22] Hongliang Lv, Yimen Zhang, Yuming Zhang, “Analytical Model of Electron Transport Characteristics for 4H-SiC Material and Devices”, Chinese Physics, 2004, Vol.13, No.7, pp 1100-1103

[23] Hongliang Lv, Yimen Zhang, Yuming Zhang, “The Study on the Breakdown Characteristics of 4H-SiC Microwave Power MESFETs”, Chinese Journal of semiconductors, Vol.25,No.9,2004. pp.1132-1137

[24] Hongliang Lv, Yimen Zhang, Yuming Zhang, “The Simulation Breakdown Characteristic of 4H-SiC SBD with Edge Termination Extension”March 15-16, 2004, Extended Abstracts of the 4th International Workshop on Junction Technology, pp183-186

[25] Tao Zhang, Hongliang Lu, Yimen Zhang, Yuming Zhang,  “sinusoidal steady state analysis on buried channel mosfets”, Chinese Physics Letters，2008, Vol.25, No.5, pp.1818-1821.

[26] Cao, Quan-Jun; Zhang, Yi-Men; Zhang, Yu-Ming; Lu, Hong-Liang; Wang, Yue-Hu; Chang, Yuan-Cheng; Tang, Xiao-Yan, “A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs”, Chinese Physics B, 2007, Vol.16, No.4, pp.1097-1100.

[27] Cao, Quan-Jun; Zhang, Yi-Men; Zhang, Yu-Ming; Lu, Hong-Liang; “New empirical large signal model of 4H-SiC MESFETs for the nonlinear analysis”, Chinese Journal of Semiconductors,2007, Vol.28, No.7, pp.1023-1029.

[28] Cao, Quan-Jun; Zhang, Yi-Men; Zhang, Yu-Ming; Lu, Hong-Liang; “Novel empirical large signal capacitance model for 4H-SiC MESFET”, Research and Progress of Solid State Electronics,2008, Vol.28, No.1, pp.33-37.

[29] Song, Qing-Wen; Zhang, Yu-Ming; Zhang, Yi-Men; Lu, Hong-Liang; Chen, Feng-Ping; Zheng, Qing-Li; “Analytical model for reverse characteristics of 4H-SiC merged PN-Schottky (MPS) diodes”, Chinese Physics, 2009, Vol.18, No.12, pp 5474-5478

[30] Hongliang Lu, Yimen Zhang, Yuming Zhang, “The extraction method for trap parameters in 4H-SiC MESFETs”, ACTA PHYSICA SINICA, 2008, Vol. 57, No. 5, pp. 2871-2874.

[31] Hongliang Lu, Yimen Zhang, Yuming Zhang, “The influence of trapping effect on frequency characteristics in 4H-SiC MESFETs”,  Chinese Journal of Electronics, 2008, Vol. 36, No. 5, pp. 933-936.

[32] Hongliang Lu, Yimen Zhang, Yuming Zhang, “Analysis of the  large-signal nonlinear characteristics of 4H-SiC MESFETs”,  Chinese Journal of Microwave, 2009, Vol. 25, No. 2, pp. 78-82.

1.  The design of high speed frequency divider based on GaAs HBTs. 2010
2.  A InGaAs/GaAs HBTs frequency divider base on ECLipse. 2010
3.  A equivalent circuit and parameter extraction method for HBTs. 2011
4.  A InGaAs/GaAs HBTs I-Q Vector Modulation circuits, 2011
5.  A high-speed programmable frequency divider, 2011