代表论文：

2022年

1. Investigation of the surface optimization of β-Ga₂O₃ films assisted deposition by pulsed MOCVD, Tao Zhang, Qian Cheng, Yifan Li, Zhiguo Hu, Jinbang Ma, Yixin Yao, Yuxuan Zhang, Yan Zuo, Qian Feng*, Yachao Zhang, Hong Zhou, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao. Scripta Materialia, Vol. 213, pp. 114623, 2022
2. Synthesis of n-type ZrO₂ doped ε-Ga₂O₃ thin films by PLD and fabrication of Schottky diode, Yangyang Gao, Zhourui Xu, Xusheng Tian, Qian Feng*, Xiaoli Lu, Chunfu Zhang, Jincheng Zhang, Yue Hao. Journal of Alloys and Compounds, Vol. 900, No. 15, pp. 163120, 2022
3. Influence of O₂ pulse on the β-Ga2O3 films deposited by pulsed MOCVD, Tao Zhang, Yifan Li, Qian Cheng, Zhiguo Hu, Jinbang Ma, Yixin Yao, Yan Zuo, Qian Feng*, Yachao Zhang, Hong Zhou, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao. Ceramics International, Vol. 48, No. 6, pp. 8268, 2022
4. Impacts of oxygen source on band alignment of ALD Al₂O₃/(α-, ε-)Ga₂O₃ interface, Yan Zuo, Qian Feng*, Tao Zhang, HaiFeng Luo, Xusheng Tian, Yuncong Cai, Yangyang Gao, Jincheng Zhang, Chunfu Zhang, Yue Hao. Journal of Crystal Growth, Vol. 580, No. 15, pp. 126462, 2022
5. Tao Zhang, Qian Cheng, Zhiguo Hu, Yifan Li, Jinbang Ma, Yixin Yao, Yan Zuo, Qian Feng*, Yachao Zhang, Hong Zhou, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao. Low temperature deposition of Ga₂O₃ films on sapphire and epi-GaN substrates, Materials Letters, Vol.308, No.7, pp. 131266, 2022.

2021年

1. Investigation of β-Ga2O3 thin films grown on epi-GaN/sapphire (0001) substrates by low pressure MOCVD, Tao Zhang, Yifan Li, Yachao Zhang, Qian Feng*, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao. Journal of Alloys and Compounds, Vol. 859, No. 5, pp. 157810, 2021
2. Investigation on the β-Ga₂O₃ deposited on off-angled sapphire (0001) substrates, Tao Zhang, Zhiguo Hu, Yifan Li, Yachao Zhang, Qian Feng*, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao. Journal of Luminescence, Vol. 233, pp. 117928, 2021.
3. Epitaxial growth of ε-(AlGa)₂O₃ films on sapphire substrate by PLD and the fabrication of photodetectors, Yangyang Gao, Qian Feng*, Zhaoqing Feng, Yan Zuo, Yuncong Cai, Yachao Zhang, Jing Ning, Chunfu Zhang, Xiaojuan Sun, Zhitai Jia, Jincheng Zhang, Yue Hao. Optical Materials Express, Vol. 11, No. 2, pp. 219, 2021
4. Research on the crystal phase and orientation of Ga2O3 hetero-epitaxial film, Tao Zhang, Yifan Li, Qian Cheng, Zhiguo Hu, Jinbang Ma, Yixin Yao, Chenxia Cu, Yan Zuo, Qian Feng*, Yachao Zhang, Hong Zhou, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao. Superlattices and Microstructures, Vol.159, pp.107053, 2021.
5. Influence of oxygen on β-Ga2O3 films deposited on sapphire substrates by MOCVD， Tao Zhang, Zhiguo Hu, Yifan Li, Qian Cheng, Jinbang Ma, Xusheng Tian, Chunyong Zhao, Yan Zuo, Qian Feng*, Yachao Zhang, Jing Ning, Hong Zhou, Chunfu Zhang, Jincheng Zhang and Yue Hao. ECS Journal of Solid State Science and Technology, Vol. 10, No. 7, pp. 075009, 2021
6. Effects of growth pressure on the characteristics of the β-Ga2O3 thin films deposited on (0001) sapphire substrates, Tao Zhang, Yifan Li, Qian Feng*, Yachao Zhang, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao. Materials Science in Semiconductor Processing, Vol. 123, pp. 105572, 2021

2020年

1. Beveled fluoride plasma treatment for vertical β-Ga₂O₃ Schottky barrier diode with high reverse blocking voltage and low turn-on voltage, Zhuangzhuang Hu, Yuanjie Lv, Chunyong Zhao, Qian Feng*, Zhaoqing Feng, Kui Dang, Xusheng Tian,Yachao Zhang, Jing Ning, Hong Zhou, Xuanwu Kang, Jincheng Zhang, member IEEE, and Yue Hao, senior member, IEEE Electron device letters,Vol.41,No.1, pp.441, 2020
2. Normally-off β-Ga₂O₃ power MOSFET with ferroelectric charge storage gate stack structure, Zhaoqing Feng, Xusheng Tian, Zhe Li, Zhuangzhuang Hu, Yanni Zhang, Xuanwu Kang, Jing Ning, Yachao Zhang, Chunfu Zhang, Qian Feng*, Hong Zhou, Jincheng Zhang, Yue Hao, IEEE Electron device letters, Vol.41, No.1, pp.333, 2020
3. Design and fabrication of field-plated normally off β-Ga₂O₃ MOSFET with laminated-ferroelectric charge storage gate for high power application, Zhaoqing Feng, Yuncong Cai, Zhe Li, Zhuangzhuang Hu, Yanni Zhang, Xing Lu, Xuanwu Kang, Jing Ning, Chunfu Zhang, Qian Feng*, Jinchang Zhang, Hong Zhou and Yue Hao, Applied Physics Letters, Vol.116, No.24, pp.243503, 2020
4. The investigation of β-Ga₂O₃ Schottky diode with floating field ring termination and the interface states, Zhuangzhuang Hu, Chunyong Zhao, Qian Feng*, Zhaoqing Feng, Zhitai Jia, Xiaozheng Lian, Zhanping Lai, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Yue Hao, Ecs Journal of Solid State Science and Technology, Vol.9, No.2, pp.025001, 2020
5. Forward current conduction mechanism of mechanically exfoliated β-Ga₂O₃/GaN pn heterojunction diode. Qian Feng*, Guangshuo Yan, Zhuangzhuang Hu, Zhaoqing Feng, Xusheng Tian, Dian Jiao, Wenxiang Mu, Zhitai Jia, Xiaozheng Lian, Zhanping Lai, Chunfu Zhang, Hong Zhou, Jincheng Zhang and Yue Hao, ECS Journal of Solid State Science and Technology, Vol.9, No.3, 035001,2020
6. Design and fabrication of vertical metal/TiO₂/β-Ga₂O₃ dielectric heterojunction diode with reverse blocking voltage of 1010 v, Zhuangzhuang Hu, Jianguo Li, Chunyong Zhao, Zhaoqing Feng, Xusheng Tian, Yanni Zhang ,Yachao Zhang , Jing Ning , Hong Zhou , Member, IEEE, Chunfu Zhang , Member, IEEE, Yuanjie Lv, Xuanwu Kang , Hao Feng, Qian Feng*, Jincheng Zhang and Yue Hao, IEEE Transactions on Electron Devices, Vol.67, No.12, pp.5628-5632, 2020.
7. The investigation of hybrid PEDOT: PSS/β-Ga₂O₃ deep ultraviolet schottky barrier photodetectors. Tao Zhang, Yixian Shen, Qian Feng*, Xusheng Tian, Yuncong Cai, Zhuangzhuang Hu, Guangshuo Yan, Zhaoqing Feng, Yachao Zhang, Jing Ning, Yongkuan Xu, Xiaozheng Lian, Xiaojuan Sun, Chunfu Zhang, Hong Zhou, Jincheng Zhang and Yue Hao, Nanoscale Research Letters, Vol. 15, No.1, pp.1-8, 2020.
8. Comparison of Ga₂O₃ films grown on m- and r-plane sapphire substrates by MOCVD, Tao Zhang, Zhiguo Hu, Yifan Li, Yachao Zhang, Qian Feng*, Jing Ning, Chunfu Zhang, Jincheng Zhang, and Yue Hao. ECS Journal of Solid State Science and Technology, Vol. 9, No.12, pp.125008, 2020.
9. Effect of temperature on the structural and optical properties of Ga₂O₃ thin films grown on m-plane sapphire substrates by low-pressure MOCVD. Tao Zhang, Yifan Li, Yachao Zhang, Qian Feng*, Jing Ning, Chunfu Zhang, Jincheng Zhang, and Yue Hao, ECS Journal of Solid State Science and Technology, Vol. 9, No.6, pp.065009, 2020.

2019年

1. The investigation of temperature dependent electrical characteristics of Au/Ni/β-(InGa)₂O₃ Schottky diode. Yixian Shen, Qian Feng*, Ke Zhang, Zhuangzhuang Hu, Guangshuo Yan, Yuncong Cai, Wenxiang Mu, Zhitai Jia, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Xiaozheng Lian, Zhanping Lai, YueHao, Superlattices and Microstructures, Vol.133, pp.106179,2019.
2. High voltage β-Ga₂O₃ Schottky diode with Argon-implanted edge termination, Yangyang Gao, Ang Li, Qian Feng*, Zhuangzhuang Hu, Zhaoqing Feng, Ke Zhang, Chunfu Zhang, Hong Zhou, Wenxiang Mu, Zhitai Jia, Jincheng Zhang, Yue Hao, Nanoscale Research Letters, Vol.14, No.1, pp.1-8, 2019
3. A 800V β-Ga₂O₃ Metal-oxide-semiconductor field-effect transistor with high-power figure of merit of over 86.3MWcm^-2, Zhaoqing Feng, Yuncong Cai, Guangshuo Yan, Zhuangzhuang Hu, Kui Dang, Yanning Zhang, Zhijun Lu, Hongjuan Cheng, Xiaozheng Lian, Yongkuan Xu, Chunfu Zhang, Qian Feng*, Hong Zhou, Jincheng Zhang, Yue Hao, Physica Status Solidi a, Vol.219, No.20, pp.1900421, 2019
4. Experimental and theoretical studies of Mo/Au Schottky contact on mechanically exfoliated β-Ga₂O₃ thin film, Zhuangzhuang Hu, Qian Feng*, Zhaoqing Feng, Yuncong Cai, Yixian Shen, Guangshuo Yan, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Yue Hao, Nanoscale Research Letters, Vol.14, No.1, pp.1-7, 2019

2018年:

1. Temperarture dependent electrical properties of pulse laser deposited Au/Ni/beta-(AlGa)₂O₃ Schottky diode, Qian Feng*, Zhaoqing Feng, Zhuangzhuang Hu, Xiangyu Xing, Guangshuo Yan, Jincheng Zhang, Yongkuan Xu, Xiaozheng Lian, and Yue Hao，APPLIED PHYSICS LETTERS，Vol,112, No.7, pp.072103, 2018
2. Field-plated lateral β-Ga₂O₃ Schottky barrier diode with high reverse blocking voltage of more than 3kV and high DC power Figure-of-Merit of 500MV/cm², Zhuangzhuang Hu, Hong Zhou, Qian Feng*, Jincheng Zhang, Chunfu Zhang, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Xuanwu Kang and Yue Hao, IEEE Electron device letters, Vol.39, No.10, pp.1564,2018
3. Band alignment of SiO₂/(Al_xGa_1-x)₂O₃ (0 ≤ x ≤ 0.49) determined by X-ray photoelectron spectroscopy, Zhaoqing Feng, Qian Feng*, Jincheng Zhang, Xiang Li, Fuguo Li, Lu Huang, Hong-Yan Chen, Hong-Liang Lu, Yue Hao, Applied Surface Science, Vol.434, No.7, pp.440-444, 2018
4. Band alignments of SiO₂ and HfO₂ dielectrics with (Al_xGa_1-x)₂O₃ film (0 ≤ x ≤ 0.53) grown on Ga2O3 buffer layer on sapphire, Zhaoqing Feng, Qian Feng*, Jincheng Zhang*, Chunfu Zhang, Hong Zhou, Xiang Li, Lu Huang, Lei Xu, Yuan Hu, Shengjie Zhao, Yue Hao, Journal of Alloys and Compounds, Vol.745, No.7, pp.292-298, 2018.
5. Tin-assisted growth of ε-Ga₂O₃ film and the fabrication of photodetectors on sapphire, Yuncong Cai, Ke Zhang, Qian Feng*, Yan Zuo, Zhuangzhuang Hu, Zhaoqing Feng, Hong Zhou, Xiaoli Lu, Chunfu Zhang, Weihua Tang, Jincheng, Optical Materials Express, Vol.8, No.11, pp.3506, 2018.
6. Influence of annealing atmosphere on the performance of a β-Ga₂O₃ thin film and photodetector, Zhaoqing Feng, Lu Huang, Qian Feng*, Xiang Li, Hui Zhang, Weihua Tang, Jincheng Zhang, and Yue Hao, Optical Materials Express,Vol.8，No.8, pp.2229, 2018.
7. Research on the growth of β-(AlGa)₂O₃ film and the analysis of electrical characteristics of Ni/Au Schottky contact using Tung's model, Qian Feng*, Zhuangzhuang Hu, Zhaoqing Feng, Xiangyu Xing, Yan Zuo, Guangshuo Yan, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Superlattices and Microstructures, Vol.120, pp.441-447, 2018
8. Investigation of temperature dependent electrical characteristics on Au/Ni/β-Ga₂O₃ Schottky diodes, Ang Li, Qian Feng*, Jincheng Zhang, Zhuangzhuang Hu, Zhaoqing Feng, Ke Zhang, Chunfu Zhang, Hong Zhou, Yue Hao, Superlattices and Microstructures, Vol.119, pp.212-217, 2018
9. Optical properties of (Al_xGa_1-x)₂O₃ on sapphire, Zhuangzhuang Hu, Qian Feng*, Jincheng Zhang, Fuguo Li, Xiang Li, Zhaoqing Feng, Chunfu Zhang, Yue Hao, Superlattices and Microstructures, Vol.114, pp.82-88, 2018
10. (In_xGa_1-x)₂O₃ Photodetectors Fabricated on Sapphire at Different Temperatures by PLD, Ke Zhang, Qian Feng*, Lu Huang, Zhuangzhuang Hu, Zhaoqing Feng, Ang Li, Hong Zhou, Xiaoli Lu, Chunfu Zhang, Jincheng Zhang, and Yue Hao, IEEE Photonics Journal, Vol.10, No.3, pp. 1-8, 2018
11. Lateral β-Ga₂O₃ Schottky barrier diode on sapphire substrate with reverse blocking voltage of 1.7 kV, Zhuangzhuang Hu, Hong Zhou, Kui Dang, Yuncong Cai, Zhaoqing Feng, Yangyang Gao, Qian Feng*, Jincheng Zhang, Yue Hao, Vol.6, pp.815-820, 2018

2018年以前：

1. (AlGa)₂O₃ solar-blind photodetectors on sapphire with wider bandgap and improved responsivity, Qian Feng*, Xiang Li, Genquan Han, Lu Huang, Fuguo Li,Weihua Tang, Jincheng Zhang and Yue Hao, Optical Materials Express, Vol.7, No.4, pp.1240-1248, 2017.
2. Comparison study of β-Ga₂O₃ photodetectors grown on sapphire at different oxygen pressures, Lu Huang, Qian Feng*, Genquan Han Fuguo Li Xiang Li, Liwei Fang, IEEE Photonics Jorunal,Vol.9,No.4, pp.6803708, 2017.
3. Comparison study of β-Ga₂O₃ photodetectors on bulk substrate and sapphire, Qian Feng*, Lu Huang, Genquan Han, Fuguo Li, Xiang Li, Liwei Fang, Xiangyu Xing, Jincheng Zhang, Wenxiang Mu, Zhitai Jia, Daoyou Guo, Weihua Tang, Xutang Tao and Yue Hao, IEEE Transactions on Electron Device, Vol.63, No.9, pp.3578, 2016.
4. The properties of gallium oxide thin film grown by pulsed laser deposition, Qian Feng*, Fuguo Li, Bo Dai, Zhitai Jia, Wenlin Xie, Tong Xu, Xiaoli Lu, Xutang Tao, Jincheng Zhang and Yue Hao, Applied Surface Science, Vol.359, pp. 847, 2015.
5. Characterization of Interface Charge in NbAlO/AlGaN/GaN MOSHEMT with Different NbAlO Thicknesses. Qian Feng*, Kai Du, Bo Dai, Liang Dong and Qing Feng, Chinese Physics Letters, Vol. 32 No.1, pp. 017301, 2015.
6. Transport properties of two-dimensional electron gas in cubic AlGaN/GaN heterostructures, Qian Feng*, Peng Shi, Jie Zhao, Kai Du, Yu Kun Li, Qing Feng, Yue Hao, In Advanced Materials Research, Vol. 873, pp. 777-782, 2014, Trans Tech Publications Ltd.
7. Effects of surface treatment on the performance of PEDOT: PSS/n-GaN Schottky solar cells. Qian Feng*, Kai Du, Yu Kun Li, Peng Shi, Qing Feng. In Applied Mechanics and Materials, Vol. 492, pp. 331-334, 2014, Trans Tech Publications Ltd.
8. Effect of annealing on performance of PEDOT: PSS/n-GaN Schottky solar cells. Qian Feng*, Kai Du, Yu Kun Li, Peng Shi, Qing Feng. Chinese Physics B, Vol. 23, No.7, pp.077303, 2014
9. Hybrid solar cell based on polythiophene and GaN nanoparticles composite, Qian Feng*, Peng Shi, Yu Kun Li, Kai Du, Qing Feng and Hao Yue, Chinese Physics B, Vol. 23, No.2, pp.028802, 2013.
10. Interface states in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors. Qian Feng*, Kai Du, Yu Kun Li, Peng Shi, Qing Feng, Chinese Physics Letters, Vol. 30 No.12, pp.127302, 2013.
11. Electrical characteristics of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor using La₂O₃ gate dielectric. Qian Feng, Qiang Wang, Tao Xing, Qian Li and Yue Hao*, Science China Technological Sciences, Vol. 56, No.3, pp.629-632, 2013.
12. Performance of La₂O₃/InAlN/GaN metal—oxide—semiconductor high electron mobility transistors. Qian Feng, Qian Li, Tao Xing, Qiang Wang, Jin-Cheng Zhang and Hao Yue. Chinese Physics B, Vol.2, No.6, pp.067305, 2012
13. A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric, Qian Feng, Tao Xing, Qiang Wang, Qing Feng, Qian Li, Zhi-Wei Bi, Jin-Cheng Zhang and Hao Yue. Chinese Physics B, Vol. 21, No.1, pp.017304, 2012.
14. The reduction of gate leakage of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors by N₂ plasma pretreatment. Qian Feng*, Yue Hao and Yuan-Zheng Yue, Semiconductor science and technology, Vol. 24, No. 2, pp. 025030, 2009.
15. The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method. Qian Feng*, Li-Mei Li, Yue Hao, Jin-Yu Ni, Jin-Cheng Zhang, Solid-State Electronics, Vol. 53, No.9, pp. 955-958, 2009.
16. The improvement of Al₂O₃/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment. Qian Feng, Yuan Tian, Zhi-Wei Bi, Yuan-Zheng Yue, Jin-Yu Ni, Jin-Cheng Zhang, Yue Hao* and Lin-An, Yang. Chinese Physics B, Vol. 18, No.7 pp.3014,2009.
17. Study of AlGaN/GaN MOSHEMT device with Al₂O₃ insulating film. Qian Feng*, Yue Hao and Yuan-Zheng Yue. Acta Physica Sinica, Vol. 57, No. 3, pp.1886-1890, 2008.
18. Strain property studies of GaN:Mg films grown by MOCVD. Qian Feng*, Yue Hao, In Materials Science Forum, Vol. 475, pp. 1697-1700, 2005. Trans Tech Publications Ltd.
19. Photoluminescence characteristics of GaN:Si. Qian Feng*, Xin Gong, Xiao-Ju Zhang, Yue Hao, Chinese Physics, Vol. 14, No.10, pp.2133, 2005
20. Comparative analysis of characteristics of GaN and GaN : Mg films grown by MOCVD, Qian Feng*, Fengxiang Wang, Yue Hao, Journal of Infrared and Millimeter Waves,Vol.23, No.3, 2004.
21. Effect of Mg doping on properties of AlGaN films. Qian Feng*, Fengxiang Wang, Yue Hao. Acta Physica Sinica, Vol, 53, No.10, pp.3587-3590, 2004.
22. Characterization of Mg-doped GaN, Qian Feng*, Yue Hao, Acta Physica Sinica, Vol, 53, No.2, pp.626-630, 2004.
23. Influence on yellow-band emission of undoped GaN induced by structural defects. Qian Feng, Meng Duan, Yue Hao. Acta Photonica Sinica, Vol, 32, No.11, pp.1340-1342, 2003.
24. XPS and PL studies of GaN epilayers grown on SiC substrate, Qian Feng, Meng Duan, Yue Hao. Acta Photonica Sinica, Vol, 32, No.12, pp.1510-13, 2003.
25. Development of SOI technology on the new insulator, Qian Feng and Hao Yue, Journal of Xidian University, Vol.28, No.6, pp.792-6, 2001.

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